CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 1/ 10
200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode
MTB1K6N06KS6R
Features
• N-MOS with ESD Gate Protection
• N-MOS with Low On-Resistance
• Low V
F
Schottky Diode
• Low Static, Switching and Conduction Losses
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB1K6N06KS6R
Outline
SOT-363
●
●
●
● ●
Ordering Information
Package
SOT-363
MTB1K6N06KS6R-0-T1-G
(Pb-free lead plating and halogen-free package)
Device
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB1K6N06S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 2/ 10
Absolute Maximum Ratings, Total Device
(Ta=25C, unless otherwise specified)
Characteristic
Power Dissipation
(Note)
Power Derating Factor above 25°C
Output Current
Symbol
P
D
P
der
I
OUT
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient to Air
(Note)
Symbol
Tj ; Tstg
R
ϴJA
Value
-55 ~ +150
625
Unit
C
C/W
Note :
Surface mounted on a FR-4 board with area of 1 in
×
0.85 in
×
0.062 in copper pad.
Sub-Component Device : ESD Protected N-Channel MOSFET (Q1)
(Ta=25C, unless otherwise specified)
Characteristic
Drain Source Voltage
Drain Gate Voltage (R
GS
<1MΩ)
Gate Source Voltage
Drain Current
Continuous(V
GS
=10V)
Pulsed (tp≤10µs, Duty Cycle≤1%)
Continuous Source Current
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
I
S
Value
60
60
±20
200
800
200
Unit
V
V
V
mA
mA
Sub-Component Device : Schottky Diode (D1)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t<1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
Value
40
28
350
1.5
Unit
V
V
mA
A
MTB1K6N06S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 3/ 10
Electrical Characteristics (Tj=25C, unless otherwise noted)
ESD protected N-Channel MOSFET (Q1)
@
T
A
=25°C, unless otherwise specified
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
Source-Drain Diode
*I
S
*I
SM
*V
SD
*trr
*Qrr
Min.
60
-
0.8
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.07
1.5
1.7
-
-
-
1.8
1.5
300
29
4.3
2.9
2.8
16
7.6
14.4
2.0
0.9
0.7
-
-
0.87
12.3
5.6
Max.
-
-
2.3
2.5
±
10
1
10
2.5
2
-
50
25
5
-
-
-
-
-
-
-
200
800
1.2
-
-
Unit
V
V/C
V
μA
mS
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS
, I
D
=1mA
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V (Tj=70
C)
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA
V
DS
=10V, I
D
=200mA
pF
V
DS
=25V, V
GS
=0, f=1MHz
V
DS
=25V, I
D
=500mA, V
GS
=10V
R
G
=6
Ω
ns
nC
V
DS
=30V, I
D
=500mA, V
GS
=10V
mA
V
ns
nC
V
GS
=0V, I
S
=300mA
I
F
=500mA, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
300μs,
Duty Cycle2%
Schottky Barrier Diode (D1)
@
T
A
=25°C, unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage Drop
Peak Reverse Current
Total Capacitance
Symbol
V
(BR)R
V
FM
I
RM
C
T
Min
40
-
-
-
-
Typ
-
-
-
-
41
Max
-
0.37
0.6
5
-
Unit
Test Conditions
V
I
R
=10μA
I
F
=20mA
V
I
F
=200mA
μA
V
R
=30V
pF V
R
=0V, f=1MHz
MTB1K6N06S6R
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics, total device
Power Derating Curve
0.25
Mounted on FR-4 board
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 4/ 10
P
D
, Power Dissipation(W)
0.2
0.15
0.1
0.05
0
0
20
40
60
80 100 120
T
A
, Ambient Temperature(℃)
140
160
Typical Characteristics, NMOS (Q1)
Typical Output Characteristics
1.4
10V, 9V, 8V, 7V, 6V
1.2
1.0
0.8
0.6
3.5V
0.4
0.2
0.0
0
1
3
V
V
GS
=2.5V
2
3
V
DS
, Drain-Source Voltage(V)
4
5
4
V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
5V
I
D
, Drain Current (A)
Brekdown Voltage vs Ambient Temperature
1.4
I
D
=250
μ
A,
V
GS
=0V
1.2
1
0.8
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10
Reverse Drain Current vs Source-Drain Voltage
1
Tj=25°C
V
SD
, Source-Drain Voltage(V)
V
GS
=2.5V
R
DS(on)
, Static Drain-Source On-State
Resistance(Ω)
0.8
0.6
0.4
0.2
V
GS
=0V
V
GS
=3V
Tj=150°C
V
GS
=4.5V
V
GS
=10V
1
0.001
0.01
0.1
I
D
, Drain Current(A)
1
0
0
0.2
0.4
0.6
0.8
I
DR
, Reverse Drain Current (A)
1
MTB1K6N06S6R
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.), NMOS (Q1)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 5/ 10
Drain-Source On-State Resistance vs Junction Tempearture
30
R
DS(ON)
, Static Drain-Source On-
State Resistance(Ω)
25
20
15
10
5
0
0
1
2
4
5
6
7
8
V
GS
, Gate-Source Voltage(V)
3
9
10
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=500mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
R
DSON
@Tj=25°C : 1.5Ω typ.
V
GS
=10V, I
D
=500mA
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
100
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
I
D
=1mA
Capacitance---(pF)
10
C
oss
Crss
1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
Power (W)
V
GS
, Gate-Source Voltage(V)
T
J(MAX)
=150°C
T
A
=25°C
R
θ
JA
=625°C/W
100
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
0
0.001
6
4
V
DS
=30V
I
D
=500mA
2
0
0.01
0.1
1
Pulse Width(s)
10
100
0
0.5
1
1.5
2
2.5
Qg, Total Gate Charge(nC)
MTB1K6N06S6R
CYStek Product Specification
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