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NDT35N06

Description
N-Channel Enhancement MOSFET
File Size1MB,4 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

NDT35N06 Overview

N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement
MOSFET
NDT35N06
TO-252
V
DS (V)
= 60V
I
D
= 35 A
R
DS(ON)
23mΩ (V
GS
= 10V)
R
DS(ON)
33mΩ (V
GS
= 4.5V)
R
DS(ON)
37mΩ (V
GS
= 4V)
1
2,4
+ 0.2
9.70
- 0.2
+ 0.15
0.50
- 0.15
MOSFET
Unit: mm
+ 0.15
1.50
- 0.15
Features
+
6.50
- 0.15
0.15
+
5.30
- 0.2
0.2
+
2.30
- 0.1
0.1
0.50
+ 0.8
- 0.7
4
+ 0.15
5.55
- 0.15
+0.1
0.80
-0.1
0.127
max
+ 0.28
1.50
- 0.1
2.65
+0.25
-0.1
2.3
4.60
+ 0.15
- 0.15
+
0.60
- 0.1
0.1
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Avalanche Current (Note.2)
Avalanche Energy (Single Pulse) (Note.3)
Power Dissipation
Tc=25°C
Junction Temperature
Storage Temperature Range
Note.1 :PW
10 us, duty cycle
1%
Note.2 :L≤100μH, Single pulse
Note.3 :V
DD
=10V, L=100μH, I
AV
=18A
Symbol
V
DS
V
GS
I
D
I
DP
I
AV
E
AS
P
D
T
J
Tstg
Rating
60
±20
35
105
18
19
40
150
-55 to 150
mJ
W
A
Unit
V
3
.8
0
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