SMD Type
N-Channel Enhancement
MOSFET
SI2302DS
■
Features
●
V
DS
=20V
+0.1
2.4
-0.1
MOSFET
(KI2302DS)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
●
R
DS
(on)= 115mΩ@V
GS
=2.5V ,I
D
=3.1A
+0.1
1.3
-0.1
●
R
DS
(on)= 85mΩ@V
GS
=4.5V ,I
D
=3.6A
0.4
3
+0.05
0.1
-0.01
G
1
3
D
+0.1
0.38
-0.1
+0.1
0.97
-0.1
1.Gate
2.Source
3.Drain
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Notes:
*1.Surface Mounted on FR4 Board, t
≤
5 sec.
*2.Surface Mounted on FR4 Board.
Ta=25℃
Ta=70℃
*1
*2
*1
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
TJ
Tstg
Rating
20
±8
2.8
2.2
10
1.25
0.8
100
166
150
-55 to 150
W
A
Unit
V
0-0.1
℃/W
℃
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1
SMD Type
N-Channel Enhancement
MOSFET
SI2302DS
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Continuous Source Current (Diode Conduction)
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
gfs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
Is=1.6A ,V
GS
=0V
V
GS
=4.5V, V
DS
=10V, R
L
=5.5Ω,R
GEN
=6Ω
I
D
=3.6A
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
V
GS
=0V, V
DS
=10V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V ,T
J
=55
℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=3.6A
V
GS
=2.5V, I
D
=3.1A
V
DS
=5V,I
D
=3.6A
Min
20
MOSFET
(KI2302DS)
Typ
Max
1
10
±100
Unit
V
μA
nA
V
mΩ
S
pF
0.62
0.95
45
70
8
300
120
80
4
0.65
1.5
7
55
16
10
1.6
0.76
1.9
85
115
10
nC
15
80
60
25
A
1.2
V
ns
* Pulse test: PW
≤300us
duty cycle≤ 2%
■
Marking
Marking
A2*
2
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SMD Type
N-Channel Enhancement
MOSFET
SI2302DS
■
Typical Characterisitics
10
MOSFET
(KI2302DS)
10
Output Characteristics
V
GS
= 5 thru 2.5 V
Transfer Characteristics
8
I D – Drain Current (A)
I D – Drain Current (A)
2V
6
8
6
T
C
= 125
。
C
4
4
2
0, 0.5, 1 V
1.5 V
2
25 C
–55 C
。
。
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
0
0
0.5
1.0
1.5
2.0
2.5
V
GS
– Gate-to-Source Voltage (V)
0.15
On-Resistance vs. Drain Current
1000
Capacitance
r DS(on)– On-Resistance (
Ω
)
0.12
V
GS
= 2.5 V
0.09
V
GS
= 4.5 V
0.06
C – Capacitance (pF)
800
600
400
C
oss
C
rss
C
iss
0.03
200
0
0
2
4
6
8
10
I
D
– Drain Current (A)
5
V
DS
= 10 V
I
D
= 3.6 A
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
Ω
)
(Normalized)
4
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
–50
Gate Charge
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3.6 A
3
2
1
0
0
1
2
3
4
5
6
7
Q
g
– Total Gate Charge (nC)
0
50
100
150
C)
T
J
– Junction Temperature (
。
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3
SMD Type
N-Channel Enhancement
MOSFET
SI2302DS
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
10
0.20
MOSFET
(KI2302DS)
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
Ω
)
0.16
I S – Source Current (A)
T
J
= 150
。
C
T
J
= 25
。
C
0.12
I
D
= 3.6 A
0.08
0.04
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
14
12
10
Power (W)
8
6
4
2
.
0.2
0.1
V GS(th) Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–50
Threshold Voltage
Single Pulse Power
I
D
= 250 A
T
C
= 25
。
C
Single Pulse
0
50
T
J
– Temperature (
。
C)
100
150
0
0.01
0.10
1.00
Time (sec)
10.00
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
–3
10
–2
10
–1
1
10
30
0.1
0.01
10
–4
Square Wave Pulse Duration (sec)
4
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