SMD Type
SMD Type
N-Channel
MOSFET
SI2324DS-HF
(KI2324DS-HF)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
IC
Unit: mm
■
Features
+0.1
2.4
-0.1
●
I
D
= 2.3 A (V
GS
= 10V)
●
R
DS(ON)
＜
234mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
267mΩ (V
GS
= 6V)
●
R
DS(ON)
＜
278mΩ (V
GS
= 4.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
D
+0.1
1.3
-0.1
●
V
DSS
= 100V
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1. Gate
2. Source
3. Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current T
J
=150℃ *1
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
100
±20
2.3
1.8
5
2.5
1.6
100
50
150
-55 to 150
W
A
Unit
V
℃/W
℃
+0.1
0.38
-0.1
Pb−Free Lead Finish
0-0.1
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1
SMD Type
SMD Type
N-Channel
MOSFET
SI2324DS-HF
(KI2324DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
a
On State Drain Current
a
Forward Transconductance
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1.3A,V
GS
=0V
I
F
= 1.3A, d
I
/d
t
= 100A/μs
I
F
= 1.3A, d
I
/d
t
= 100A/μs
V
GS
=4.5V, V
DS
=50V, R
L
=39Ω,R
GEN
=1Ω
V
GS
=4.5V, V
DS
=50V, I
D
=1.6A
V
GS
=0V, V
DS
=0V, f=1MHz
0.3
V
GS
=0V, V
DS
=50V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=1.5A
V
GS
=6V, I
D
=1A
V
GS
=4.5V, I
D
=0.5A
V
GS
=4.5V, V
DS
≥5V
V
DS
=20V, I
D
=1.5A
5
1.2
Min
100
MOSFET
IC
Typ
Max
1
10
±100
2.8
234
267
278
Unit
V
μA
nA
V
mΩ
A
2
190
22
13
1.4
5.2
0.75
1.4
30
26
17
12
22
21
0.8
45
39
26
20
33
32
2.1
1.2
2.8
10.4
S
pF
Ω
nC
ns
nC
A
V
a.Pulse
test ; pulse width ≤300 μs,duty cycle≤2%
■
Marking
Marking
D4*
F
2
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SMD Type
SMD Type
N-Channel
MOSFET
SI2324DS-HF
(KI2324DS-HF)
3
V
GS
= 10 V thru 5 V
4
I
D
- Drain Current (A)
V
GS
= 4 V
I
D
- Drain Current (A)
2.4
MOSFET
IC
■
Typical Characterisitics
5
3
1.8
2
1.2
T
C
= 25
°C
1
V
GS
= 3 V
0.6
T
C
= 125
°C
T
C
= - 55
°C
2
3
4
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
1
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.28
300
Transfer Characteristics
R
DS(on)
- On-Resistance
(Ω)
0.26
V
GS
= 4.5 V
V
GS
= 6 V
0.22
C - Capacitance (pF)
240
C
iss
180
0.24
120
0.20
V
GS
= 10 V
0.18
60
C
oss
0
0
1
2
3
4
5
0
C
rss
20
40
60
80
100
0.16
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1.6 A
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 25 V
6
V
DS
= 50 V
4
V
DS
= 80 V
1.75
2.2
I
D
= 1.5 A
Capacitance
V
GS
= 6 V
1.3
2
0.85
V
GS
= 10 V
0
0
1.5
3
4.5
6
Q
g
- Total Gate Charge (nC)
0.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature(°C )
Gate Charge
On-Resistance vs. Junction Temperature
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SMD Type
SMD Type
N-Channel
MOSFET
SI2324DS-HF
(KI2324DS-HF)
0.6
MOFET
IC
■
Typical Characterisitics
10
I
D
= 1.5 A
R
DS(on)
- On-Resistance
(Ω)
I
S
- Source Current (A)
T
J
= 150
°C
0.45
T
J
= 125
°C
0.3
T = 25
°C
0.15
1
T
J
= 25
°C
0.1
0.0
0
0.3
0.6
0.9
1.2
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.8
On-Resistance vs. Gate-to-Source Voltage
10
2.5
V
GS(th)
(V)
8
Po w er (W)
2.2
I
D
= 250 µA
6
4
1.9
2
T
A
= 25 °C
1.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
Time (s)
100
1000
T
J
- Temperature(
°C
)
Threshold Voltage
10
Single Pulse Power
Limited by R
DS(on)
*
100 µs
I
D
- Drain Current (A)
1
1 ms
0.1
10 ms
100 ms
0.01
T
A
= 25
°C
Single Pulse
1
1 s, 10 s
DC
BVDSS Limited
10
100
1000
0.001
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
Safe Operating Area
4
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SMD
Type
SMD
Type
N-Channel
MOSFET
SI2324DS-HF
(KI2324DS-HF)
■
Typical Characterisitics
MOSFET
IC
2.8
I
D
- Drain Current (A)
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature(°C )
Current Derating*
3
1.0
2.4
0.8
Power (W)
1.2
Power (W)
1.8
0.6
0.4
0.6
0.2
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature(°C)
T
C
- Case Temperature ( C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
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