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1N5822/TR

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D-5B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

1N5822/TR Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D-5B, 2 PIN

1N5822/TR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionHERMETIC SEALED, D-5B, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
• 1N5822 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/620
• 3 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
1N5822
and
DSB5820 thru DSB5822
and
DSB3A20 thru DSB3A40
MAXIMUM RATINGS
0.115/0.145
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 3.0 AMP @ TL = +55°C, L = 3/8”
Derating: 43 mA / °C above TL = +55°C, L = 3/8”
2.92/3.68
0.130/0.195
3.30/4.95
0.900
22.86
0.036/0.042
0.91/1.07
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
MAXIMUM FORWARD VOLTAGE
VF @ 1.0 A
VOLTS
0.40
0.40
0.40
0.40
0.40
0.40
0.40
VF @ 3.0 A
VOLTS
0.50
0.50
0.50
0.50
0.50
0.50
0.50
VF @ 9.4A
VOLTS
0.70
0.70
0.70
0.70
0.70
0.70
0.70
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
mA
0.10
0.10
0.10
0.10
0.10
0.10
0.10
IR @ +100°C
mA
12.5
12.5
12.5
12.5
12.5
12.5
12.5
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed, “B” Body
per MIL-PRF-19500/620. D-5B
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC): 30
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 3
°
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any
DSB5820
DSB5821
DSB5822
J,JX,JV & JS
5822
DSB3A20
DSB3A30
DSB3A40
20
30
40
40
20
30
40
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
67

1N5822/TR Related Products

1N5822/TR 055U2R2M251PT-B
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D-5B, 2 PIN Ceramic Capacitor, Multilayer, Ceramic, 250V, 20% +Tol, 20% -Tol, NP0, -/+30ppm/Cel TC, 0.0000022uF, 0606,
Is it Rohs certified? incompatible conform to
package instruction HERMETIC SEALED, D-5B, 2 PIN , 0606
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
JESD-609 code e0 e4
Number of terminals 2 2
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -65 °C -55 °C
Package form LONG FORM SMT
Terminal surface TIN LEAD Palladium/Silver (Pd/Ag)
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