SMD Type
PNP Transistors
2SA1839-HF
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
3
+0.2
2.8
-0.1
●
Low collector-to-emitter saturation voltage.
●
Low ON resistance.
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
2
0.55
●
Small output capacitance.
+0.2
1.6
-0.1
■
Features
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Colletor Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
stg
Rating
-15
-10
-5
-100
-200
-20
250
150
-55 to 150
mW
℃
mA
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
On Resistance
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
R
on
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，R
BE
=∞
I
E
= -100μA， I
C
=0
V
CB
= -12 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10mA, I
B
=-1mA
I
C
=-10mA, I
B
=-1mA
V
CE
= -2V, I
C
= -5mA
I
B
= -3mA,f=1MHz
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= - 5 V, I
C
= -10mA
200
3
0.9
600
-0.82
Min
-15
-10
-5
-100
-100
-0.04 -0.15
-1.1
600
Ω
pF
MHz
nA
V
V
Typ
Max
Unit
■
Marking
Marking
LS
F
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