Semiconductor
DP030E
PNP Silicon Transistor
Features
•
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= -0.15V Typ. @I
C
/I
B
=-100mA/-10mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DN030E
•
Switching Application
Ordering Information
Type NO.
DP030E
Marking
P01
Package Code
SOT-523F
Outline Dimensions
unit :
mm
1.60±0.1
0.88±0.1
1.60±0.1
1.00±0.1
1
3
2
0.25~0.30
0.68
-0.05
+0.1
PIN Connections
1. Base
2. Emitter
3. Collector
0~0.1
KST-4010--000
1.11±0.05
1
DP030E
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25° C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-15
-12
-5
-300
150
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat1)
V
CE(sat2)
V
BE(sat1)
V
BE(sat2)
f
T
C
ob
Test Condition
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-12V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-300mA
I
C
=-100mA, I
B
=-10mA
I
C
=-300mA, I
B
=-30mA
I
C
=-100mA, I
B
=-10mA
I
C
=-300mA, I
B
=-30mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min.
-15
-12
-5
-
-
200
70
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
350
4
Max.
-
-
-
-0.1
-0.1
450
-
-0.2
-0.5
-1.2
-1.7
-
-
Unit
V
V
V
µA
µA
-
-
V
V
V
V
MHz
PF
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
KST-4010--000
2
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