SMD Type
NPN Transistors
2SC3648-HF
Transistors
■
Features
●
High breakdown voltage and large current capacity.
●
Fast switching speed.
●
Complementary to 2SA1418-HF
0.42 0.1
1.70
0.1
0.46 0.1
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Rating
180
160
6
0.7
1.5
500
150
-55 to 150
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
f
C
ob
f
T
V
CB
= 10V,f=1MHz
V
CE
= 10V, I
C
= 50mA
See sepcified Test Circuit.
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA，R
BE
=
∞
I
E
= 100μA， I
C
= 0
V
CB
= 120 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=250mA, I
B
=25mA
I
C
=250mA, I
B
=25mA
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 10mA
100
90
50
1000
60
8
120
pF
MHz
ns
0.12
0.85
Min
180
160
6
0.1
0.1
0.4
1.2
400
uA
V
V
Typ
Max
Unit
■
Classification of h
fe (1)
Type
Range
Marking
2SC3648-R-HF
100-200
CDR
F
2SC3648-R-HF
140-280
CDS
F
2SC3648-T-HF
200-400
CDT
F
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SMD Type
NPN Transistors
2SC3648-HF
Switching Time Test Circuit
PW=20μ
s
D.C.≤
1%
INPUT
VR
50Ω
IB1
IB2
RB
333Ω
+
100μ
F
--5V
+
470μ
F
100V
Transistors
IC=20IB1=--20IB2=300mA
(For PNP, the polarity is reversed)
■
Typical Characterisitics
800
700
IC -- VCE
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
From top
100mA
90mA
80mA
70mA
60mA
50mA
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
VCE(sat) -- IC
IC / IB=10
Collector Current, IC -- mA
600
500
400
300
200
100
0
40mA
30mA
20mA
10mA
IB=0mA
0
200
400
600
800
1000
For PNP, minus sign is omitted
3
5
7
10
Collector-to-Emitter Voltage, VCE -- mV
1000
IC -- VCE
Collector Current, IC -- mA
2
3
5
7 100
2
3
5
7 1000
2
1000
7
5
hFE -- IC
Pulse
Collector Current, IC -- mA
800
DC Current Gain, hFE
600
A
3.5m
3.0mA
2.5mA
2.0mA
3
2
m
A
VC
10V
4.
0
100
7
5
3
2
10
7
5
3
5V
=2
E
V
400
1.5mA
1.0mA
200
0.5mA
0
IB=0mA
0
10
20
30
40
50
60
70
80
Collector-to-Emitter Voltage, VCE -- V
3
5
7 10
2
3
5
Collector Current, IC -- mA
7 100
2
3
5
7 1000
2
2
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SMD Type
NPN Transistors
2SC3648-HF
■
Typical Characterisitics
5
Transistors
f T -- IC
Output Capacitance, Cob -- pF
100
7
5
3
2
10
7
5
3
2
1.0
Cob -- VCB
f=1MHz
Gain-Brandwidth Product, f T -- MHz
3
2
100
7
5
3
2
10V
V CE=
5V
10
For PNP, minus sign is omitted
1.0
2
3
5
7
5
7
10
2
3
5
7
Collector Current, IC -- mA
100
2
3
5
7 1000
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
Collector-to-Base Voltage, VCB -- V
10
2
3
5
7 100
2
ICP=1.5A
s
1m
s
m
10
1.8
1.6
PC -- Ta
Collector Current, IC -- A
0m
s
Collector Dissipation, PC -- W
IC=0.7A
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
DC
op
era
t
ion
0.01
7
5
1.0
Ta=25
°
C
Single pulse
Mounted on a ceramic board (250mm
2
0.8mm)
For PNP, minus sign is omitted
2
3
5
7
No h
eat s
ink
Collector-to-Emitter Voltage, VCE -- V
10
2
3
5
7
100
2
3
0
0
20
Ambient Temperature, Ta --
°
C
40
60
80
100
120
140
160
1000
IC -- VBE
Collector Current, IC -- mA
800
VCE=5V
For PNP, minus sign is omitted
600
400
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
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