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2SC3649-R

Description
NPN Transistors
File Size1MB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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2SC3649-R Overview

NPN Transistors

SMD Type
NPN Transistors
2SC3649
Transistors
Features
High breakdown voltage and large current capacity.
Complementary to 2SA1419
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Rating
180
160
6
1.5
2.5
500
150
-55 to 150
A
mW
V
Unit
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
f
C
ob
f
T
V
CB
= 10V,f=1MHz
V
CE
= 10V, I
C
= 50mA
See sepcified Test Circuit.
Test Conditions
Ic= 100 μA, I
E
= 0
Ic= 1 mA,R
BE
=
I
E
= 100μA, I
C
= 0
V
CB
= 120 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 10mA
100
80
40
1200
80
14
120
pF
MHz
ns
0.13
0.85
Min
180
160
6
1
1
0.45
1.2
400
uA
V
V
Typ
Max
Unit
Classification of h
fe(1)
Type
Range
Marking
2SC3649-R
100-200
CER
2SC3649-S
140-280
CES
2SC3649-T
200-400
CET
www.kexin.com.cn
1

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