SMD Type
PNP Transistors
BC807
(KC807)
SOT-23
Transistors
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
2.4
-0.1
●
Epitaxial planar die construction
●
Complementary NPN type available(BC817)
+0.1
1.3
-0.1
●
Ldeally suited for automatic insertion
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-50
-45
-5
-0.5
0.3
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
hfe（1）
hfe（2）
f
T
Test Conditions
Ic= -100uA，I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100 uA，
C
= 0
I
V
CB
= -45 V , I
E
=0
V
CE
=- 40 V , I
B
=0
V
EB
= -4V , I
C
=0
I
C
=-500 mA, I
B
=- 50mA
I
C
= -500 mA, I
B
= -50mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA,f=100MHz
100
40
100
MHz
Min
-50
-45
-5
-0.1
-0.2
-0.1
-0.7
-1.2
630
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Rank
Range
Marking
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-630
5C
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1
SMD Type
PNP Transistors
BC807
■
Typical Characterisitics
-
280
(mA)
-
240
-
200
-
160
-
120
-
80
-
40
I
B
=-0.1mA
0
0
Transistors
(KC807)
h
FE
—— I
C
T
a
=100 C
o
Static Characteristic
-1mA
COMMON
-0.9mA EMITTER
T
a
=25
℃
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
-
500
-
400
h
FE
DC CURRENT GAIN
-
300
COLLECTOR CURRENT
I
C
T
a
=25 C
o
-
200
V
CE
= -1V
-
-
100
-
1
-
10
COLLECTOR CURRENT
I
C
-
100
(mA)
- 500
-
2
-
6
-
10
-
8
-
4
COLLECTOR-EMITTER VOLTAGE
-
12
14
V
CE
(V)
-
16
-1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
β=10
-0.4
V
CEsat
——
I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1.0
-0.3
-0.8
T
a
=25
℃
-0.2
-0.6
T
a
=100
℃
-0.4
-0.1
T
a
=100
℃
T
a
=25
℃
-0.2
-0.1
-1
-10
-100
- 500
-0.0
-0.1
-1
-10
-100
- 500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-1000
I
C
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
C
ib
o
I
C
(mA)
50
-100
COLLECTOR CURRENT
-10
CAPACITANCE
T
a
=100 C
T
a
=25
℃
o
C
10
(pF)
-1
C
ob
V
CE
=-1V
-0.1
-
0.3
-
0.4
-
0.5
0.7
-
0.8
-
0.6
BASE-EMITTER VOLTAGE
V
BE
(V)
--
0.9
-
1.0
1
0
-
5
REVERSE VOLTAGE
V
(V)
-
10
300
f
T
——
I
C
COLLECTOR POWER DISSIPATION
P
c
(W)
0.4
P
c
——
T
a
(MHz)
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
V
CE
=-5V
T
a
=25 C
10
o
-
1
-
10
COLLECTOR CURRENT
I
C
(mA)
- 60
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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