SMD Type
PNP
Transistors
BCX51、BCX52、BCX53
（KCX51、KCX52、KCX53）
Transistors
Features
●
NPN Complements to BCX54,BCX55,BCX56
●
Low Voltage
●
High Current
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
BCX51
BCX52
BCX53
Collector-emitter voltage
BCX51
BCX52
BCX53
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
R
th(j-a)
R
th(j-s)
V
CEO
Symbol
V
CBO
Rating
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
-200
1.3
-65 to +150
150
-65 to +150
94
14
K/W
K/W
Unit
V
V
V
V
V
V
V
A
A
mA
W
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1
SMD Type
BCX51、BCX52、BCX53
（KCX51、KCX52、KCX53）
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
I
CBO
I
EBO
h
FE
Testconditions
V
CB
= -30 V, I
E
= 0
V
CB
= -30 V, I
E
= 0; Tj = 125
V
EB
= -5 V, I
C
= 0
I
C
= -5 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
I
C
= -500 mA; V
CE
= -2 V
DC current gain BCX51-10,BCX52-10,BCX53-10
BCX51-16,BCX52-16,BCX53-16
Collector-emitter saturation voltage
Base to emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
h
FE
I
C
= -150 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
I
C
= -500 mA; I
B
= -50 mA
I
C
= -500 mA; V
CE
= -2 V
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
Transistors
Min
Typ
Max
-100
-10
-100
Unit
nA
uA
nA
63
63
40
63
100
160
250
-500
-1
50
mV
V
MHz
250
h
FE
Classification
TYPE
Marking
TYPE
Marking
TYPE
Marking
BCX51
AA
BCX52
AE
BCX53
AH
BCX51-10
AC
BCX52-10
AG
BCX53-10
AK
BCX51-16
AD
BCX52-16
AM
BCX53-16
AL
■
Typical Characterisitics
handbook, full pagewidth
160
MBH730
hFE
120
VCE = 2 V
－
80
40
10
1
－－
0
－
1
－
10
－
10
2
－
10
3
IC (mA)
－
10
4
Fig.1 DC current gain; typical values.
2
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