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UCHD30A09_15

Description
Schottky Barrier Diode
File Size774KB,3 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet View All

UCHD30A09_15 Overview

Schottky Barrier Diode

30A Avg. 90Volts
UCHD30A09
構造:ショットキーバリアダイオード(SBD)
Construction : Schottky Barrier Diode
Schottky Barrier Diode
DSE-13058(1/3)
外½寸法図
OUTLINE DRAWING
Dimension : mm
Package : TO-263LP
用途:高周波整流用
Application : High-Frequency Rectification
特長
薄型 SMD
½熱抵抗
高電流
Tj=150℃
Feature
Lower Profile SMD
Lower Thermal-Resistance
High Current Capability
Tj=150℃
Weight
: 0.59g(typ.)
Flammability : Epoxy Resin=UL94V-0 Recognized
■ 絶対最大定格(表示無き場合
項目
Item
くり返しピーク逆電圧
Repetitive Peak Reverse Voltage
平均整流電流
Average Rectified Output Current
実効順電流
RMS Forward Current
サージ順電流
Surge Forward Current
繰り返しピークサージ逆電力
Repetitive Peak surge Reverse Power
動½接合温度範囲
Operation Junction Temperature Range
保存温度範囲
Storage Temperature Range
Ta=25℃)
Absolute Maximum Ratings (Ta = 25
o
C unless otherwise stated)
記号
Symbol
条件
Conditions
定格値
Rating
単½
Units
V
RRM
I
O
I
F(RMS)
I
FSM
P
RRSM
T
jw
T
stg
50Hz 正弦全波,抵抗負荷
Tc=111℃ V
RM
=45V
50H Full Sine Wave, Resistive Load
50Hz 正弦全波 1 サイクル 非繰り返し
50Hz Full Sine Wave,1 cycle,Non-repetitive
パルス幅 10μs,1 素子½り,Tj=25℃
Pulse width 10
μs,per
diode,Tj=25℃
90
30
33.3
250
195
-40½+150
-40½+150
V
A
A
A
W
■電気的・熱的特性
Electrical / Thermal Characteristics
項目
Item
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
接合容量
Junction Capacitance
熱抵抗
Thermal Resistance
記号
Symbol
条件
Conditions
最小値
min.
Per diode
代表値
typ.
最大値
max.
単½
Units
I
RM
V
FM
Cj
Rth(j-c)
V
RM
=V
RRM
,T
j
=25℃,
-
-
-
-
-
-
370
-
100
0.79
-
1.5
μA
V
pF
℃/W
I
FM
=15A,T
j
=25℃,
Per diode
f=100kHz,VR=10V,
Per diode
接合部・ケース間
Junction to Case
本資料の記載内容は½品改良などのため予告なく変更することがあります
Date of issue 2013.10.11
The content specified herein is subject to change without notice.
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