10F20HF3S thru 10F40HF3S
Pb
®
Pb Free Plating Product
10F20HF3S thru 10F40HF3S
TO-220HF-3L
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
10.0 Ampere Insulated Common Anode Super Fast Recovery Rectifiers
Features
¬
Fast switching for high efficiency
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
Mechanical Data
¬
Case:Fully plastic isolation TO-220HF-3L
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-202
method 208
¬
Polarity:As marked on diode body
¬
Mounting position: Any
¬
Weight: 2.0 gram approximately
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.4)
.583(14.8)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
10F20HF3 10F30HF3 10F40HF3
UNIT
10F20HF3S 10F30HF3S 10F40HF3S
200
140
200
300
210
300
10.0
400
280
400
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.3
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05/2015
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
10F20HF3S thru 10F40HF3S
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10
100
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
8
80
6
60
4
40
2
60 Hz Resistive or
Inductive load
0
0
50
100
o
20
0
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
50
10F20HF3/10F20HF3S
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
5.0
10F30HF3/10F30HF3S
100
T
J
=125 C
o
10
T
J
=25 C
1
o
10F40HF3/10F40HF3S
1
0.1
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.05/2015
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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