SMD Type
NPN Transistors
BC849~BC850
(KC849~KC850)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Low voltage (max. 45 V).
●
PNP complements: BC859 and BC860.
+0.1
1.3
-0.1
●
Low current (max. 100 mA)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: Transistor mounted on an FR4 printed-circuit board.
(Note.1)
Thermal Resistance From Junction to Ambient (Note.1)
BC849
BC850
BC849
BC850
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
R
thja
T
J
T
stg
Rating
30
50
30
45
5
100
200
200
250
500
150
-55 to 150
mW
K/W
℃
mA
V
Unit
www.kexin.com.cn
1
SMD Type
NPN Transistors
BC849~BC850
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
BC849
BC850
Collector- emitter breakdown voltage BC849
BC850
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Voltage
DC current gain
DC current gain
Collector capacitance
Emitter capacitance
Noise Figure
BC849B,BC850B
BC849C,BC850C
BC849B,BC850B
BC849C,BC850C
C
c
C
e
NF
h
FE
V
CE
= 5V, I
C
= 2mA
V
CB
= 10V, I
C
=i
c
= 0,f=1MHz
V
EB
= 0.5V , I
E
=i
e
= 0,f=1MHz
I
C
=200uA,V
CE
=5V,R
S
=2KΩ;
f=10Hz to 15.7KHz
I
C
=200uA,V
CE
=5V,R
S
=2KΩ;
f=1KHz,B=200Hz
V
CE
= 5V, I
C
= 10mA,f=100MHz
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
Test Conditions
Ic= 100
μA，
I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 30 V , I
E
= 0
V
CB
= 30 V , I
E
= 0,T
J
=150℃
V
EB
= 5V , I
C
=0
I
C
=10 mA, I
B
=0.5mA (Note.1)
I
C
=100 mA, I
B
=5mA (Note.1)
I
C
=10 mA, I
B
=0.5mA (Note.2)
I
C
=100 mA, I
B
=5mA (Note.2)
I
C
=2 mA, V
CE
=5V (Note.2)
I
C
=10 mA, V
CE
=5V (Note.2)
V
CE
= 5V, I
C
= 10uA
Transistors
(KC849~KC850)
Min
30
50
30
45
5
15
5
100
90
200
700
900
580
660
240
450
200
420
290
520
2.5
11
4
dB
4
100
MHz
450
800
pF
700
770
250
500
mV
nA
uA
nA
V
Typ
Max
Unit
Transition frequency
f
T
Note.1: V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
Note.2: V
BE
decreases by about 2 mV/K with increasing temperature.
■
Classification of h
fe
Type
Range
Marking
BC849B
200-450
2B*
BC849C
420-800
2C*
BC850B
200-450
2F*
BC850C
420-800
2G*
2
www.kexin.com.cn
SMD Type
NPN Transistors
BC849~BC850
■
Typical Characterisitics
handbook, full pagewidth
Transistors
(KC849~KC850)
300
hFE
VCE = 5 V
200
100
0
10
−2
BC849B; BC850B.
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
hFE
VCE = 5 V
400
200
0
10
−2
BC849C; BC850C.
10
−1
1
10
10
2
IC (mA)
10
3
Fig.3 DC current gain; typical values.
www.kexin.com.cn
3
京公网安备 11010802033920号
EEWORLD
