DK48N80
®
Pb Free Plating Product
DK48N80
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
The
DK48N80
is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged E
AS
capability and ultra low R
DS(ON)
is suitable for PWM, load
switching especially for E-Bike controller applications.
DK48N80
(TO-220 HeatSink)
Features
●
V
DS
=70V；I
D
=80A@ V
GS
=10V；
G
D
S
R
DS(ON)
<5.8mΩ @ V
GS
=10V
●
Special Designed for E-Bike Controller Application
●
Ultra Low On-Resistance
●
High UIS and UIS 100% Test
Schematic Diagram
Application
●
48V E-Bike Controller Applications
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
V
DSS
= 70V
I
DSS
= 80A
R
DS(ON)
= 5.5mΩ
Table 1. Absolute Maximum Ratings (TA=25 )
(TA=25℃)
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
Parameter
Drain-Source Voltage (
V
GS=
0V）
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Value
70
±25
80
78
320
30
145
1.9
Unit
V
V
A
A
A
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
W/℃
P
D
E
AS
Single Pulse Avalanche Energy
(Note 2)
590
-55 To 175
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=33V,V
G
=10V,I
D
=48.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
DK48N80
Table 2. Thermal Characteristic
Symbol
R
θJC
®
Parameter
Thermal Resistance,Junction-to-Case
Value
0.6
Unit
℃/W
(TA=25℃unless
Table 3. Electrical Characteristics (TA=25 unless otherwise noted)
Symbol
On/Off States
On/O
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS
=0V I
D
=250μA
V
DS
=68V,V
GS
=0V
V
DS
=68V,V
GS
=0V
V
GS
=±25V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
2
5.5
70
1
1
±100
4
5.8
V
μA
μA
nA
V
mΩ
Parameter
Condition s
Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=30V,I
D
=30A,
V
GS
=10V
V
DS
=25V,V
GS
=0V,
f=1.0MHz
V
DS
=10V,I
D
=40A
28
3200
350
320
75
14
20
S
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Switching Times
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=30V,I
D
=2A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
12
14
25
30
nS
nS
nS
nS
Source-D
Source-Drain Diode Characteristics
I
SD
I
SDM
V
SD
t
rr
Q
rr
t
on
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Forward on Voltage
(Note 1)
Reverse Recovery Time
(Note 1)
Reverse Recovery Charge
(Note 1)
Forward Turn-on Time
T
J
=25℃,I
SD
=40A,V
GS
=0V
T
J
=25℃,I
F
=75A
di/dt=100A/μs
80
320
0.8
45
90
0.95
A
A
V
nS
nC
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1
.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, R
G
=25Ω, Starting T
J
=25℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Embedded System
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