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IDT71V3556XS133BQ8

Description
ZBT SRAM, 128KX36, 4.2ns, CMOS, PBGA165
Categorystorage    storage   
File Size2MB,29 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT71V3556XS133BQ8 Overview

ZBT SRAM, 128KX36, 4.2ns, CMOS, PBGA165

IDT71V3556XS133BQ8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
package instructionBGA, BGA165,11X15,40
Reach Compliance Codenot_compliant
Maximum access time4.2 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of terminals165
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.04 A
Minimum standby current3.14 V
Maximum slew rate0.3 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
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