Multi-Port SRAM, 1KX8, 90ns, CMOS, PDIP48
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Mosel Vitelic Corporation ( MVC ) |
| package instruction | DIP, DIP48,.6 |
| Reach Compliance Code | unknown |
| Maximum access time | 90 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T48 |
| JESD-609 code | e0 |
| memory density | 8192 bit |
| Memory IC Type | MULTI-PORT SRAM |
| memory width | 8 |
| Number of ports | 2 |
| Number of terminals | 48 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP48,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.01 A |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |





| V61C30P90S | V61C30G55L | |
|---|---|---|
| Description | Multi-Port SRAM, 1KX8, 90ns, CMOS, PDIP48 | Multi-Port SRAM, 1KX8, 55ns, CMOS, CQCC48 |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Mosel Vitelic Corporation ( MVC ) | Mosel Vitelic Corporation ( MVC ) |
| package instruction | DIP, DIP48,.6 | QCCN, LCC48,.56SQ,40 |
| Reach Compliance Code | unknown | unknown |
| Maximum access time | 90 ns | 55 ns |
| I/O type | COMMON | COMMON |
| JESD-30 code | R-PDIP-T48 | S-XQCC-N48 |
| JESD-609 code | e0 | e0 |
| memory density | 8192 bit | 8192 bit |
| Memory IC Type | MULTI-PORT SRAM | MULTI-PORT SRAM |
| memory width | 8 | 8 |
| Number of ports | 2 | 2 |
| Number of terminals | 48 | 48 |
| word count | 1024 words | 1024 words |
| character code | 1000 | 1000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C |
| organize | 1KX8 | 1KX8 |
| Output characteristics | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | CERAMIC |
| encapsulated code | DIP | QCCN |
| Encapsulate equivalent code | DIP48,.6 | LCC48,.56SQ,40 |
| Package shape | RECTANGULAR | SQUARE |
| Package form | IN-LINE | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified |
| Maximum standby current | 0.01 A | 0.0001 A |
| Nominal supply voltage (Vsup) | 5 V | 5 V |
| surface mount | NO | YES |
| technology | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | NO LEAD |
| Terminal pitch | 2.54 mm | 1 mm |
| Terminal location | DUAL | QUAD |