SMD Type
PNP Transistors
FZT589
(KZT589)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
7.0±0.3
■
Features
●
Collector Current Capability I
C
=-1A
●
Collector Emitter Voltage V
CEO
=-30V
●
Complementary to FZT489
4
3.50±0.2
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
stg
Rating
-50
-30
-5
-1
-2
-200
2
150
-55 to 150
A
mA
W
℃
V
Unit
3.Emitter
4.Collector
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn-On Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE(1)
DC current gain
(Note.1)
h
FE(2)
h
FE(3)
h
FE(4)
Collector output capacitance
Transition frequency
Note.1: Pulse width=300us. Duty cycle
≤
2%
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -30 V , I
E
=0
V
CES
=-30V,I
B
=0
V
EB
= -4V , I
C
=0
I
C
=-1 A, I
B
=-100mA
I
C
=-2 A, I
B
=-200mA
I
C
=-1 A, I
B
=-100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -1mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1 A
V
CE
= -2V, I
C
= -2 A
V
CB
= -10V, f=1MHz
V
CE
= -5V, I
C
= -100mA,f=100MHz
100
(Note.1)
(Note.1)
(Note.1)
(Note.1)
100
100
80
40
15
pF
MHz
300
Min
-50
-30
-5
-0.1
-0.1
-0.1
-0.35
-0.65
-1.2
-1.1
V
uA
V
Typ
Max
Unit
www.kexin.com.cn
1
PCB Design
京公网安备 11010802033920号
EEWORLD
