d
DATA
SHEET
PHOTOREFLECTIVE SENSOR
LEADFRAME PACKAGE
HVS6003-002
FEATURES:
VCSEL and phototransistor in
industry standard leadframe
packaging
IEC 80625 Class 1 Laser Product
Optical plastics block visible
wavelength for better ambient light
rejection
Optical isolation of VCSEL and
Phototransistor
Narrow beam VCSEL allows sensing
distances of more than 20mm
Very low power consumption
The HVS6003-002 is designed as a higher performance alternative to LED based reflective sensors. This Vertical Cavity
Surface Emitting Laser (VCSEL) based sensor enables reflective sensing at longer distances and of targets with lower
specular reflection. In addition, the HVS6003-002 significantly decreases the total amount of electrical power dissipation.
To further suppress ambient light, the HVS6003-002 is potted with a visible wavelength absorbing optical plastic.
IEC 80625 Class 1 Laser Product.
Part Number
HVS6003-002
Description
VCSEL and Phototransistor in leadframe package. Parts are shipped in industry standard tape
and reel package.
HVS6003-002
PHOTOREFLECTIVE SENSOR
ABSOLUTE MAXIMUM
RATINGS
Parameter
Storage Temperature
Case Operating Temperature
Lead Solder Temperature
Laser peak forward current with pulse
width less than 1μs
Laser continuous average current
Laser reverse voltage
ESD Exposure (Human Body Model)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Rating
-40 to +85°C
-40 to +85°C
260°C, 10 sec.
18mA
15mA
5V
200V
30V
5V
100mW
*-20ºC operation under assessment
1
Heel and wrist straps must be used on a properly grounded
workstation
Notice
Stresses greater than those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operations section for
extended periods of time may affect reliability.
Notice
The inherent design of this component causes it to be sensitive to
electrostatic discharge (ESD). To prevent ESD-induced damage
and/or degradation to equipment, take normal ESD precautions when
handling this product
HVS6003-002
PHOTOREFLECTIVE SENSOR
VCSEL ELECTRO-OPTICAL
T
A
=25°C unless otherwise stated
CHARACTERISTICS
Phototransistor
Parameters
VCSEL Operating Current
Optical Power Output
Optical Power variation with
temperature
Threshold Current
Threshold Current
Temperature Variation
Slope Efficiency
Slope Efficiency
Temperature variation
Peak Wavelength
Laser Forward Voltage
Laser Reverse Voltage
Rise and Fall Times
Series Resistance
Series Resistance
Temperature Coefficient
Beam Divergence
Divergence change with
Current
Test Condition
Adjustable to
establish operating
power
I
F
=6mA
I
F
= 6mA, T
A
= -40 to
5°C
T
A
= 0 C to 70 C
Po =1.6mW
T
A
= 0
o
C to 70
o
C
I
F
=6mA
I
F
=6 mA
I
R
=10µA
Prebias Above
Threshold, 20%-80%
I
F
=6 mA
I
F
=6 mA, FW1/e
2
o
o
Symbol
I
OP
P
O
ΔP/ΔT
I
TH
Δ
I
TH
η
Δη
/ΔT
λ
P
V
F
BVR
LD
t
r
/t
f
R
S
ΔR/ΔT
Θ
ΔΘ/ΔΙ
Min.
Typ.
6
Max.
15
2.5
3
2.5
1.5
0.5
Units
mA
mW
dB
mA
mA
mW/mA
%/
o
C
nm
V
V
ps
Ohms
%/
o
C
DEG
DEG/mA
Notes
1
1
2
3
4
5
1
1.6
1
1
-1.5
0.25
2
0.4
-0.6
850
1.8
-10
35
-0.3
24
0.6
830
1.5
860
2.2
500
25
18
50
30
6
NOTES:
1. Operating power is set by the average current in the VCSEL
2. The VCSEL operating power can be more tightly controlled using simple circuitry discussed in the application note
“VCSEL Spice Model”
3. The VCSEL threshold current is parabolic with temperature. For specifications outside of the 0 to 70
o
C range, please
contact AOC.
4. Slope efficiency is defined as
ΔP
o
/ΔI
F
at a total power output of 1.6 mW.
5. The VCSEL slope efficiency is a nearly linear function with temperature. For specifications outside of the 0 to 70
o
C
range, please contact AOC.
6. Beam divergence is defined as the 1/e
2
power points.
TYPICAL (NOT GUARANTEED) VCSEL PERFORMANCE CHARACTERISTICS:
5
4.5
4
3.5
Power (mW)
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
12
14
16
18
20
Current (mA)
-50°C
-20°C
10°C
40°C
70°C
-40°C
-10°C
20°C
50°C
80°C
-30°C
0°C
30°C
60°C
90°C
110%
100%
Normalized Power (%)
90%
80%
70%
60%
50%
-50 -40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100
-20
Temperature (C)
-15
-10
-5
0
5
10
15
20
Divergence (Degrees)
Full Width at 10% Point
IF - 4mA
IF - 6mA
IF - 8mA
IF - 10mA
IF - 12mA
5m A
10m A
15m A
HVS6003-002
PHOTOREFLECTIVE SENSOR
PHOTOTRANSISTOR ELECTRO-OPTICAL
T
A
=25°C unless otherwise stated), with flex circuit.
CHARACTERISTICS
VCSEL Parameters
Optical crosstalk current
I
CE
Collector Dark Current
Collector – Emitter
Breakdown Voltage
Emitter – Collector
Breakdown Voltage
Collector – Emitter
Saturation Voltage
Photocurrent Rise/Fall Time
Test Condition
V
CE
= 5V, I
VCSEL
=
6mA
I
VCSEL
= 6mA, V
CE
=
5V, R
L
= 100Ω
V
CE
= 5V, I
VCSEL
=0
I
C
=100μA
I
E
=100μA
I
C
=I
L
/8,
V
CC
=5V, I
L
=1mA,
R
L
=1000Ω
Symbol
I
L, Feedback
Min.
Typ.
0.001
5
10
Max.
0.01
16
100
30
5
0.4
10
Units
mA
mA
nA
V
V
V
μs
4
Notes
1,3
2
3
4
I
CEO
V
BR-CEO
V
BR-ECO
V
SAT-CE
T
R
/T
F
NOTES:
1. The crosstalk current is measured in a dark environment with no optical feedback. Ambient light can cause an offset
in the measurement.
2. I
CE
is defined with a Kodak 90% diffuse whitecard (frequency scale) placed at a distance of 1mm. Refer to the
schematic representation below.
3. Collector dark current is measured with the VCSEL off and in an environment free of ambient light. Optical crosstalk is
measured in the same dark environment, but with the VCSEL forward biased at 6mA
4. The rise and fall times depend on the load resistor used.
Reflector
1.0
0.9
0.8
Normalized I
CE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
10
12
D=
VCSEL
Phototransistor
Distance (mm)
HVS6003-002
PIN OUT
PIN
A
B
C
D
PHOTOREFLECTIVE SENSOR
Description
VCSEL Anode
VCSEL Cathode
PT Collector
PT Emitter
ELECTRICAL SCHEMATIC
VCSEL
Collector
VCSEL
Emitter
It is recommended in application that a 100-1000Ω load resistor be connected between the emitter and a negative
power supply between 5 and 15V. The output can be read as the voltage across the resistor. Alternatively, the case
can be connected to a power supply with the load resistor remaining connected to the emitter.
SOLDER REFLOW PROFILE
260ºC MAX
5s MAX
+5ºC/sec max ramp
60s MAX at 200 ºC
160ºC±10 ºC
90-120s preheat
-5ºC/sec max ramp
NOTES:
1. The above temperature profile shall be at the surface of LED resin.
2. Number of reflow process should be less than 2 times. If the second reflow process is performed, intervals between
the first and the second process should be as short as possible to prevent moisture absorption from LED resin.
Cooling process to normal temperature is required between the first and the second reflow process.
3. Temperature fluctuation to LED at pre-heat process should be minimized. (less than 6ºC)
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