SMD Type
NPN Transistors
BC817W
(KC817W)
Transistors
■
Features
●
For General AF Applications
●
High Collector Current
●
High Current Gain
●
Low Collector-Emitter Saturation Voltage
●
Complementary to BC807W
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
50
45
5
0.5
0.2
625
150
-55 to 150
A
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
=0
Ic= 10 mA， I
B
=0
I
E
= 100μA， I
C
=0
V
CB
= 50 V , I
E
=0
V
EB
= 5V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
=500 mA, I
B
=50mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CB
= 10V,f=1MHz
V
CE
= 5V, I
C
= 10mA,f=100MHz
100
100
40
5
pF
MHz
Min
50
45
5
0.1
0.1
0.7
1.2
1.2
600
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
BC817W-16
100-250
6A
BC817W-25
160-400
6B
BC817W-40
250-600
6C
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1
SMD Type
NPN Transistors
BC817W
■
Typical Characterisitics
250
Transistors
(KC817W)
Static Characteristic
COMMON EMITTER
T
a
=25
℃
0.80mA
0.72mA
1000
h
FE
——
I
C
COLLECTOR CURRENT I
C
(mA)
200
T
a
=100
℃
DC CURRENT GAIN h
FE
0.64mA
0.56mA
T
a
=25
℃
150
0.48mA
0.40mA
100
100
0.32mA
0.24mA
50
0.16mA
I
B
=0.08mA
0.5
1.0
1.5
2.0
2.5
3.0
3.5
COMMON EMITTER
V
CE
= 1V
10
0.5
1
10
100
500
0
0.0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1200
V
BEsat
β=10
——
I
C
1000
V
CEsat
β=10
——
I
C
900
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
600
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
300
0.1
1
10
100
500
10
0.1
1
10
100
500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
500
I
C
COMMON EMITTER
V
CE
=1V
——
V
BE
TRANSITION FREQUENCY f
T
(MHz)
1000
f
T
——
I
C
COLLECTOR CURRENT I
C
(mA)
100
100
℃
T=
a
10
0
10
T =2
5
℃
a
10
1
T
a
=25
℃
0.1
300
600
900
1200
1
0.69
1
COMMON EMITTER
V
CE
= 5V
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
10
I
C
(mA)
100
1000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
250
P
C
——
T
a
CAPACITANCE C (pF)
100
T
a
=25
℃
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
150
10
C
ob
100
1
50
0.1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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