SMD Type
PNP Transistors
BC857T
(KC857T)
SOT-523
+0.
1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Transistors
U n it: m m
0.15±0.05
0.55 (REF.)
■
Features
●
Ideally suited for automatic insertion
●
For Switching and AF Amplifier Applications
2
1
1.
-0.15
6
+0.15
3
0.3±0.05
+0.1
0.5
-0.1
0.
36±0.1
1. Base
0.
-0.05
75
+0.05
0.
-0.11
8
+0.
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-50
-45
-6
-0.1
150
150
-55 to 150
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
NF
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -2mA
V
CE
=-5V,f=1MHz,Ic=0.2mA
Rs=2KΩ,BW=200HZ
V
CB
= -10V,f=1MHz
V
CE
= -5 V,I
C
=-10mA,f=100MHz
100
125
-0.6
-0.7
-0.9
-0.75
-0.82
800
10
4.5
dB
pF
MHz
Min
-50
-45
-6
-0.1
-0.1
-0.3
-0.65
V
uA
uA
V
Typ
Max
Unit
■
Classification of hfe
Type
Range
Marking
BC857AT
125-250
3E
BC857BT
220-475
3F
BC857CT
420-800
3G
0.
8±0.1
www.kexin.com.cn
1
京公网安备 11010802033920号
EEWORLD
