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SMCJ85

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size272KB,4 Pages
ManufacturerETC2
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SMCJ85 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

SMCJ5.0 thru SMCJ170CA
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 170 Volts
Peak Pulse Power
1500 Watts
Features
CASE: SMC (DO214AB)
Breakdown Voltages (V
BR
) from 5.0 to 170V
1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
E
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Cathode indicated by band. No marking on
bi-directional devices
Weight:
0.21g(Approximately)
25 C unless otherwise specified
O
Mechanical Data
Value
1500
SEE TABLE1
6.0
1.56
200
3.5
20
80
-65 to +150
Unit
W
A
W
W
A
V
℃/W
℃/W
Steady state power dissipation at T
L
=30℃ ,Lead lengths 0.375”(10mm)
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Peak forward surge current,8.3ms single half sine-wave unidirectional only
Maximum instantaneous forward voltage at 100A for unidirectional only⑴
Thermal resistance junction to lead
Thermal resistance junction to ambient
T
J,
T
STG
Operating and Storage Temperature
Notes:
Measured on 8.3ms single half sine-wave
Document Number: SMCJ5.0 thru SMCJ170CA
Feb.29,2012
1
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