V59C1G01(408/808/168)QB
HIGH PERFORMANCE 1Gbit DDR2 SDRAM
8 BANKS X 32Mbit X 4 (408)
8 BANKS X 16Mbit X 8 (808)
8 BANKS X 8Mbit X 16 (168)
3
DDR2-667
Clock Cycle Time (t
CK3
)
Clock Cycle Time (t
CK4
)
Clock Cycle Time (t
CK5
)
Clock Cycle Time (t
CK6
)
Clock Cycle Time (t
CK7
)
System Frequency (f
CK max
)
5ns
3.75ns
3ns
3ns
3ns
333 MHz
25A
DDR2-800
5ns
3.75ns
3ns
2.5ns
2.5ns
400 MHz
25
DDR2-800
5ns
3.75ns
2.5ns
2.5ns
2.5ns
400 MHz
PRELIMINARY
19A
DDR2-1066
5ns
3.75ns
3ns
2.5ns
1.875ns
533 MHz
Features
■
High speed data transfer rates with system frequency
up to 533 MHz
■
8 internal banks for concurrent operation
■
4-bit prefetch architecture
■
Programmable CAS Latency: 3, 4 ,5 , 6 and 7
■
Programmable Additive Latency:0, 1, 2, 3 , 4, 5 and 6
■
Write Latency=Read Latency-1
■
Programmable Wrap Sequence: Sequential
or Interleave
■
Programmable Burst Length: 4 and 8
■
Automatic and Controlled Precharge Command
■
Power Down Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tcase
between 0
o
C and 85
o
C
■
OCD (Off-Chip Driver Impendance Adjustment)
■
ODT (On-Die Termination)
■
Weak Strength Data-Output Driver Option
■
Bidirectional differential Data Strobe (Single-ended
data-strobe is an optional feature)
■
On-Chip DLL aligns DQ and DQs transitions with CK
transitions
■
DQS can be disabled for single-ended data strobe
■
Read Data Strobe (RDQS) supported (x8 only)
■
Differential clock inputs CK and CK
■
JEDEC Power Supply 1.8V ± 0.1V
■
VDDQ=1.8V ± 0.1V
■
Available in 68-ball FBGA for x4 and x8 component or
84-ball FBGA for x16 component
■
RoHS compliant
■
PASR Partial Array Self Refresh
■
tRAS lockout supported
Description
The V59C1G01(408/808/168)QB is a eight bank DDR
DRAM organized as 8 banks x 32Mbit x 4 (408), 8 banks x
16Mbit x 8 (808), or 8 banks x 8Mbit x 16 (168). The
V59C1G01(408/808/168)QB achieves high speed data
transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the output
data to a system clock.
The chip is designed to comply with the following key
DDR2 SDRAM features:(1) posted CAS with additive la-
tency, (2)write latency=read latency-1, (3)Off-chip Driv-
er(OCD) impedance adjustment, (4) On Die Termination.
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
s are synchronized with a pair of bidirectional strobes
(DQS, DQS) in a source synchronous fashion.
Operating the eight memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device.
Available Speed
Table 1:
Grade
Grade
-3 (DDR2-667)
-25A (DDR2-800)
-25 (DDR2-800)
-19A (DDR2-1066)
CL
5
6
5
7
tRCD
5
6
5
7
tRP
5
6
5
7
Unit
CLK
CLK
CLK
CLK
Device Usage Chart
Operating
Temperature
Range
0°C to 85°C
V59C1G01(408/808/168)QB Rev.1.0 June 2008
Package Outline
68 ball FBGA
84 ball FBGA
•
CK Cycle Time (ns)
-3
•
Power
Std.
•
-25A
•
-25
•
-19A
•
L
•
Temperature
Mark
Blank
1
Embedded System
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