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PHD50N06LT

Description
MOSFETs;50A;55V;DPAK/TO-252
File Size261KB,2 Pages
ManufacturerInchange Semiconductor
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PHD50N06LT Overview

MOSFETs;50A;55V;DPAK/TO-252

PHD50N06LT Preview

Isc N-Channel MOSFET Transistor
PHD50N06LT
·FEATURES
·With
To-252(DPAK) package
·Low
input capacitance and gate charge
·Low
gate input resistance
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching
applications
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
55
±13
50
35
200
125
150
-50~150
UNIT
V
V
A
A
W
·THERMAL
CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
MAX
55
1.2
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi
is registered trademark
Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
BV
DSS
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
CONDITIONS
V
GS
=0V; I
D
= 0.25mA
V
DS
=5V; I
D
=1.0mA
V
GS
= 10V; I
D
=12.5A
V
GS
=±5V;V
DS
= 0V
V
DS
=55V; V
GS
= 0V
I
SD
=25A, V
GS
= 0 V
MIN
55
1.0
PHD50N06LT
TYP
MAX
UNIT
V
V
GS
(th
)
R
DS(
on
)
I
GSS
I
DSS
V
SDF
2.0
17
22
1
10
1.2
V
μA
μA
V
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website:www.iscsemi.cn
2
isc & iscsemi
is registered trademark
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