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FDS6898AZ_F085

Description
9.4 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size312KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDS6898AZ_F085 Overview

9.4 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

FDS6898AZ_F085 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging code8LD, SOIC,JEDEC MS-012, .150\" NARROW BODY, DUAL DAP
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)9.4 A
Maximum drain current (ID)9.4 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)38 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDS6898AZ_F085
Dual N-Channel Logic Level PWM Optimized PowerTrench
®
MOSFET
February
2010
FDS6898AZ_F085
Dual N-Channel Logic Level PWM Optimized PowerTrench
®
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
tm
Features
9.4 A, 20 V
R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 18 mΩ @ V
GS
= 2.5 V
Low gate charge (16 nC typical)
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Qualified to AEC Q101
RoHS Compliant
D2
D
D2
D
D
D1
D1
D
5
6
G1
S1
G
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
7
8
G2
S2
S
S
S
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±
12
(Note 1a)
Units
V
V
A
W
9.4
38
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
–55 to +150
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6898AZ
Device
Reel Size
13’’
1
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS6898AZ_F085
©2010 Fairchild Semiconductor Corporation
FDS6898AZ_F085 Rev.
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