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BAT54

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size250KB,2 Pages
ManufacturerGSME Electronics
WebsiteHttp://www.gsme.com.cn
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BAT54 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBAT54
SCHOTTKY DIODE
肖特基二極管
(BAT54)
FEATURES
特點
Characteristic
特性參數
Power dissipation
耗散功率
Forward Current
正向電流
Reverse Voltage
反向電壓
Junction and Storage Temperature
結溫和儲藏溫度
DEVICE MARKING
打標
BAT54=JV3
ELECTRICAL CHARACTERISTICS
電特性
Symbol
符號
P
D
(Ta=25
)
I
F
V
R
T
J
,
T
stg
Max
最大值
225
200
30
Unit
單½
mW
mA
V
-55to+150
)
(T
A
=
25
unless otherwise noted
如無特殊說明,溫度爲
25℃)
Characteristic
特性參數
Reverse Breakdown Voltage
反向擊穿電壓
(IR=10uA)
Reverse Leakage Current
反向漏電流
(VR=25V)
Forward Voltage(Test Condition)正向電壓
I
F
=0.1mAdc
I
F
= 1mAdc
I
F
= 10mAdc
I
F
= 30mAdc
I
F
=100mAdc
Diode Capacitance
二極體電容
(V
R
=1V, f=1MHz)
Reverse Recovery Time
反向恢復時間
SOT-23
内部结构
1
Symbol
符號
V
(BR)
I
R
Min
最小值
30
Max
最大值
2
Unit
單½
V
uA
V
F
C
D
Trr
240
320
400
500
800
10
5
mV
pF
nS
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