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1N5393SR1G

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N5393SR1G Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N5393SR1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
surface mountNO
Terminal surfacePURE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5391S thru 1N5399S
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.33g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ Rated VR T
J
=25
T
J
=125℃
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θjC
R
θjL
R
θjA
T
J
T
STG
1.1
5
50
30
22
25
65
- 55 to +125
- 55 to +125
O
O
O
1N
50
35
50
1N
100
70
100
1N
200
140
200
1N
400
280
400
1.5
50
1.0
1N
600
420
600
1N
800
560
800
1N
1000
700
1000
5391S 5392S 5393S 5395S 5397S 5398S 5399S
UNIT
V
V
V
A
A
V
μA
pF
C/W
C
C
Document Number: DS_D1406002
Version: E14
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