FDBL0630N150 N-Channel Power Trench® MOSFET
FDBL0630N150
N-Channel Power Trench
®
MOSFET
150V, 169A, 6.3mΩ
Features
Typ r
DS(on)
= 5mΩ at V
GS
= 10V, I
D
= 80A
Typ Q
g(tot)
= 70nC at V
GS
= 10V, I
D
= 80A
UIS Capability
RoHS Compliant
November 2014
D
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
G
S
For current package drawing, please refer to the Fairchild
website at https://www.fairchildsemi.com/evaluate/package‐
specifications/packageDetails.html?id=PN_PSOFA‐008
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
R
θJC
R
θJA
Gate to Source Voltage
Drain Current - Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 C
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
(Note 3)
o
Parameter
Ratings
150
±20
T
C
= 25°C
T
C
= 25°C
(Note 2)
169
See Figure4
502
500
3.3
-55 to + 175
0.3
43
Units
V
V
A
mJ
W
W/
o
C
o
o
o
T
J
, T
STG
Operating and Storage Temperature
C
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDBL0630N150
Device
FDBL0630N150
Package
MO-299A
Reel Size
-
Tape Width
-
Quantity
-
Notes:
1: Current is limited by junction temperature.
2: Starting T
J
= 25°C, L = 0.24mH, I
AS
= 64A, V
DD
= 100V during inductor charging and V
DD
= 0V during time in avalanche
3:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
R
θJC
is guaranteed by design while
R
θJA
is determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad of 2oz copper.
©2014 Fairchild Semiconductor Corporation
FDBL0630N150 Rev.C2
1
www.fairchildsemi.com
FDBL0630N150 N-Channel Power Trench® MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
V
DS
= 150V,
V
GS
= 0V
V
GS
= ±20V
T
J
=
T
J
=
150
-
4)
-
-
-
-
-
-
-
1
1
±100
V
μA
mA
nA
25
o
C
175
o
C(Note
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250μA
I
D
= 80A,
V
GS
= 10V
T
J
=
T
J
=
2.0
-
4)
-
2.8
5
14
4.0
6.3
17.5
V
mΩ
mΩ
25
o
C
175
o
C(Note
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Q
g(ToT)
Q
g(th)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
DS
= 75V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 75V
I
D
= 80A
-
-
-
-
-
-
-
-
5805
536
16
2.2
70
10.5
32.5
10
-
-
-
-
90
13
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 75V, I
D
= 80A,
V
GS
= 10V, R
GEN
= 6Ω
-
-
-
-
-
-
-
39
30
70
23
-
80
-
-
-
-
130
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
T
rr
Q
rr
Notes:
4: The maximum value is specified by design at T
J
= 175°C. Product is not tested to this condition in production.
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=80A, V
GS
= 0V
I
SD
= 40A, V
GS
= 0V
I
F
= 80A, dI
SD
/dt = 100A/μs,
V
DD
=120V
-
-
-
-
-
-
108
323
1.25
1.2
125
467
V
V
ns
nC
FDBL0630N150 Rev.C2
2
www.fairchildsemi.com
FDBL0630N150 N-Channel Power Trench® MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
o
C)
T
C
, CASE TEMPERATURE(
175
1.0
0.8
0.6
0.4
0.2
0.0
200
160
120
80
40
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE(
o
C)
200
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
C
SINGLE PULSE
0.01
-5
10
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
I
DM
,
PEAK CURRENT (A)
1000
I = I
2
175 - T
C
150
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
FDBL0630N150 Rev.C2
3
www.fairchildsemi.com
FDBL0630N150 N-Channel Power Trench® MOSFET
Typical Characteristics
1000
I
D
, DRAIN CURRENT (A)
1000
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100us
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
1
0.1
1
SINGLE PULSE
TJ
= MAX RATED
TC
= 25oC
1ms
10ms
100ms
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0.001
0.01
0.1
1
10
100
1000 10000
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
200
160
120
I
S
, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
400
100
V
GS
= 0 V
I
D
, DRAIN CURRENT (A)
T
J
= 175
o
C
10
T
J
= 175
o
C
T
J
= 25
o
C
80
T
J
= 25
o
C
T
J
= -55
o
C
1
40
0
2
4
5
6
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
8
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
300
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
250
200
150
100
50
0
0
5V
80
μ
s PULSE WIDTH
Tj=25
o
C
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
250
200
150
100
50
0
0
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
5V
80
μ
s PULSE WIDTH
Tj=175
o
C
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
FDBL0630N150 Rev.C2
4
www.fairchildsemi.com
FDBL0630N150 N-Channel Power Trench® MOSFET
Typical Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
50
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE (
m
Ω
)
I
D
=
80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
2
T
J
= 25
o
C
T
J
= 175
o
C
I
D
= 80A
V
GS
= 10V
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 11. Rdson vs Gate Voltage
Figure 12. Normalized Rdson vs Junction
Temperature
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
0.9
0.6
0.3
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE(
o
C)
200
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
=
V
DS
I
D
= 250
μ
A
1.10
I
D
= 1mA
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
V
GS
, GATE TO SOURCE VOLTAGE(V)
10000
10
I
D
= 80A
CAPACITANCE (pF)
C
iss
1000
C
oss
8
6
4
2
0
V
DD
= 75V
V
DD
=60V
V
DD
= 90V
100
10
f = 1MHz
V
GS
= 0V
C
rss
1
0.1
1
10
100 200
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
0
20
40
60
Q
g
,
GATE CHARGE(nC)
80
Figure 15. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge vs Gate to Source
Voltage
FDBL0630N150 Rev.C2
5
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
