DF005S2 - DF10S2 — Bridge Rectifier
October 2014
DF005S2 - DF10S2
Bridge Rectifier
Features
• Maximum Surge Rating: I
FSM
= 85 A
I
2
t = 30 A
2
Sec
• Optimized V
F
: Typical 0.93 V at 2 A, 25°C
• DF10S Socket Compatible
• Glass Passivated Junctions
• Space Saving
• Lead Free in Comply with
EU RoHS 2002/95/EU Directives
• Green Molding Compound: IEC61249 Halogen Free
• Qualified with IR Reflow and Wave Soldering
Description
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS2 family sets a new standard in
performance.
The new design offers an improved surge rating of 85 A.
This is especially important when striving to improve reli-
ability and increase efficiency. High efficiency designs
strive to reduce circuit resistance, which, unfortunately
can result in increased inrush surge. As such higher
surge current ratings can be required to maintain or
improve reliability.
The design also offers improved efficiency by achieving a
2 A V
F
of 1.1 V maximum at 25°C. This lower V
F
also
supports cooler and more efficient operation.
~
IN
+
OUT
Finally, the DFxS2 achieves all this in a SDIP surface
mount form factor, reducing board space and volumetric
requirements vs. competitive devices.
SDIP
~
-
Ordering Information
Part Number
DF005S2
DF01S2
DF02S2
DF04S2
DF06S2
DF08S2
DF10S2
Top Mark
DF005S2
DF01S2
DF02S2
DF04S2
DF06S2
DF08S2
DF10S2
Package
SDIP 4L
SDIP 4L
SDIP 4L
SDIP 4L
SDIP 4L
SDIP 4L
SDIP 4L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.0.1
www.fairchildsemi.com
DF005S2 - DF10S2 — Bridge Rectifier
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
Parameter
Maximum Recurrent Peak
Reverse Voltage
Maximum RMS Bridge Input
Voltage
Maximum DC Blocking
Voltage
Maximum Average Forward
Current T
A
= 40°C
Peak Forward Surge Current
8.3 ms Single Half-Sine
Wave Superimposed on
Rated Load(JEDEC Method)
Storage Temperature Range
Operating Junction Tempera-
ture Range
Value
DF005S2 DF01S2 DF02S2 DF04S2 DF06S2 DF08S2 DF10S2
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
Unit
V
V
V
A
I
FSM
T
STG
T
J
85
A
°C
°C
-55 to +150
-55 to +150
Thermal Characteristics
(1)
Symbol
Parameter
Conditions
Single-Die Measurement
(Maximum Land Pattern: 13 x 13 mm)
R
θJA
Thermal Resistance,
Junction to Ambient
Multi-Die Measurement
(Maximum Land Pattern: 13 x 13 mm)
Multi-Die Measurement
(Minimum Land Pattern: 1.3 x 1.5 mm)
ψ
JL
Thermal Characterization
Single-Die Measurement
Parameter, Junction to Lead (Maximum and Minimum Land Pattern)
Max.
60
50
100
25
Unit
°C/W
°C/W
Note:
1. The thermal resistances (R
θJA
&
ψ
JL
) are characterized with the device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
F
S
S
F
F
S
S
F
Figure 1. Maximum Pads of 2 oz Copper
Figure 2. Minimum Pads of 2 oz Copper
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.0.1
www.fairchildsemi.com
2
DF005S2 - DF10S2 — Bridge Rectifier
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
F
I
R
I
2
t
C
J
Parameter
DC Reverse Current
at Rated DC Blocking Voltage
Rating for Fusing (t < 8.3 ms)
Junction Capacitance
Conditions
T
J
= 25°C
T
J
= 125°C
V
R
= 4.0 V,
f = 1.0 MHz
Min.
Typ.
Max.
1.1
3
500
30
Unit
V
μA
A
2
S
pF
Forward Voltage Drop per Bridge Element I
F
= 2.0 A
23
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.0.1
www.fairchildsemi.com
3
DF005S2 - DF10S2 — Bridge Rectifier
Typical Performance Characteristics
10
100
Forward Current, I
F
[A]
Reverse Current, I
R
[
μ
A]
10
1
T
J
=150 C
1
o
T
J
=125 C
o
T
J
=150 C
0.1
o
0.1
T
J
=25 C
o
T
J
=125 C
o
T
J
=25 C
o
0.01
T
J
= -55 C
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1E-3
200
400
o
T
J
=-55 C
600
800
1000
o
Forward Voltage Drop, V
F
[V]
Reverse Voltage, V
R
[V]
Figure 3. Typical Instantaneous Forward
Characteristics
Figure 4. Typical Reverse Characteristics
2.0
100
I
FSM
, Peak Forward Surge Current [A]
180
200
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
Average Current [DC]
1.5
Max Pad (Sigle die)
1.0
0.5
0.0
40
60
80
100
120
140
160
o
Ambient Temperature [ C]
Number of Cycles at 60 Hz
Figure 5. Maximum Average Current vs.
Ambient Temperature
40
35
Figure 6. Peak Forward Surge Current vs.
Number of Cycles at 60Hz
f = 1 MHz
Juntion Capacitance, C
J
[pF]
30
25
20
15
10
5
0
0
10
20
30
40
50
Reverse Voltage, V
R
[V]
Figure 7. Typical Junction Capacitance
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.0.1
www.fairchildsemi.com
4
DF005S2 - DF10S2 — Bridge Rectifier
Physical Dimensions
5.200
5.000
1.30
4
3
1.50
PIN1 ID
OPTIONAL
6.500
6.200
10.300
9.400
10.40
1
1.200
0.890
2
5.10
TOP VIEW
8.510
8.050
LAND PATTERN RECOMMENDATION
7.874
7.370
CHAMFER
OPTIONAL
2.60
2.20
0.330
0.220
1.000
0.028
1.12
SIDE VIEW
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY REFERENCE STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
G. DRAWING FILE NAME: MKT-SDIP04AREV4.
1.530
1.020
END VIEW
Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.0.1
www.fairchildsemi.com
5
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