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DF005

Description
1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size78KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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DF005 Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DF005 THRU DF10
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
DF
FEATURES
0.350(8.9)
0.300(7.6)
+
0.255(6.5)
0.245(6.2)
0.335(8.51)
0.325(8.10)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,5 lbs. (2.3kg) tension
0.135(3.4)
0.115(2.9)
0.185(4.69)
0.150(3.81)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Weight:0.02
ounce, 0.4 grams
0.020(.51)
0.016(.41)
0.060
0.205(5.2)
0.195(5.0)
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for current capacitive load derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
0.06”
(1.5mm) lead lenth
at T
A
=40 C (Note 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
SYMBOLS
DF005
50
35
50
DF01
100
70
100
DF02
200
140
200
DF04
400
280
400
1.0
50.0
10
1.1
DF06
600
420
600
DF08
800
560
800
DF10 UNITS
1000
700
1000
VOLTS
VOLTS
VOLTS
Amps
Amps
A
2
s
Volts
µ
A
mA
pF
C/W
C
C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
10
0.5
25
40
-65 to +150
-65 to +150
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.51” x 0.51”(13x13mm) copper pads.
MDD ELECTRONIC

DF005 Related Products

DF005 DF01 DF04 DF10 DF01M DF02 DF06 DF08
Description 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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