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GBJ1501

Description
3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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GBJ1501 Overview

3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ1501 Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
Maximum non-repetitive peak forward current240 A
Number of components4
Maximum operating temperature150 °C
Maximum output current15 A
Maximum repetitive peak reverse voltage50 V
surface mountNO
GBJ1501
THRU
GBJ1507
SINGLE PHASE 15.0 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
15.0 Amperes
FEATURES
* Ideal for printed circuit board
* Low forward voltage
* Low leakage current
1.193(30.3)
1.169(29.7)
GBJ
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.441(11.2)
.425(10.8)
.708(18.0)
.669(17.0)
.165(4.2)
.142(3.6)
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Plated leads solderable per MIL-STD-202,
method 208 guranteed
* Mounting position: Any
* Weight: 6.8 grams
~
~
.189
(4.8)
MECHANICAL DATA
+
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.800(20.3)
.776(19.7)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
.402(10.2) .303(7.7) .303(7.7)
SPACING
.386(9.8) .287(7.3) .287(7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current at Tc=100 C (Without heatsink)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 7.5A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
JC
(Note 2)
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
NOTES:
GBJ1501 GBJ1502 GBJ1503 GBJ1504 GBJ1505 GBJ1506 GBJ1507
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
15.0
3.2
240
1.1
5.0
500
60
0.8
-55 +150
-55 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
A
V
A
A
PF
C/W
C
C
Ta=100 C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance from Junction to Case with device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
310

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Description 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknown unknown unknown unknown unknown unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V
Maximum non-repetitive peak forward current 240 A 240 A 240 A 240 A 240 A 240 A 240 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 15 A 15 A 15 A 15 A 15 A 15 A 15 A
Maximum repetitive peak reverse voltage 50 V 200 V 600 V 800 V 1000 V 100 V 400 V
surface mount NO NO NO NO NO NO NO
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