MB358 datasheet, PDF - EEWORLD Datasheet

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MB358: Description35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size70KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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MB358 Overview

35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MB358 Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	400 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	35 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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MB3505

THRU

MB3510

SINGLE PHASE 35 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

35.0 Amperes

MB

.452

MAX.

(11.5)

FEATURES

* Superior thermal design

* 400 amperes surge capability

* Mounting: Hole thru for #8 screw

AC

.480(12.2)

.425(10.8)

1.181(30.0)

1.102(28.0)

HOLE FOR

NO. 8 SCREW

.673(17.1)

.633(16.1)

+

.673(17.1)

.633(16.1)

AC

* 1/4" universal faston terminal

.732(18.6)

.692(17.6)

1.181(30.0)

1.102(28.0)

.582(14.8)

.543(13.8)

.033X.250

(0.8X6.4)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Tc=55 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 17.5AD.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Operating Temperature Range, T

J

Storage Temperature Range, T

STG

Ta=100 C

MB3505

MB351

MB352

MB354

MB356

MB358 MB3510

UNITS

50

35

50

100

70

100

200

140

200

400

280

400

35

400

1.1

10

500

-65 +150

600

420

600

800

560

800

1000

700

1000

V

A

V

A

C

332

MB358 Related Products

	MB358	MB3505	MB356	MB351	MB3510	MB352	MB354
Description	35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, SILICON, BRIDGE RECTIFIER DIODE	35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maker	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	800 V	50 V	600 V	100 V	1000 V	200 V	400 V
surface mount	NO	NO	NO	NO	NO	NO	NO

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