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3KP9.0A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size74KB,4 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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3KP9.0A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

3KP
SERIES
3000 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS
VOLTAGE RANGE
FEATURES
* 3000 Watts Surge Capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time: Typically less than
1.0ps from 0 volt to BV min.
* Typical I
R
less than 1 A above 10V
5.0 to 440 Volts
3000 Watts Peak Power
R-6
.360(9.1)
.340(8.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.360(9.1)
.340(8.6)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATINGS
Peak Power Dissipation at T
A
=25 C, T
P
=1ms(NOTE 1)
Power Dissipation on infinite heatsink at T
L
=75 C
Peak Forward Surge Current at 8.3ms Single Half Sine-Wave
superimposed on rated load (JEDEC method) (NOTE 3)
Maximum Instantenous Forward Voltage at 100A for
Unidirectional only
Operating and Storage Temperature Range
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 3000
6.5
300
3.5/5.0
-55 to +150
UNITS
Watts
Watt
Amps
Volts
C
NOTES:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25 C per Fig. 2.
2. 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V.
DEVICES FOR BIPOLAR APPLICATIONS
1. For Bidirectional use C or CA Suffix for types 3KP5.0 thru 3KP440.
2. Electrical characteristics apply in both directions.
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