^ssni-Gonauatoi iPioaucii, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IN3491 thru 1N3495 (SILICON)
V
f t
-tolOOOV
I
0
= 25A
(DO-21)
Medium-current silicon rectifiers -compact, highly
efficient silicon rectifiers for medium-current appli-
cations.
MAXIMUM RATINGS
in
Rating
Pwk Repetitive Reverie Voltage
Working Peak Reverae Voltage
OC Blocking Voltage
Non~RepeUtive Peak Reverie Voltage
(halfwave, single phase,
60 cycle peak)
RMS Reverie Voltage
Average Rectified Forward Current
(single phaie, re«l»tlve toad,
80 Hz , aee Figure 3) T
c
- 130°C
Non-Repetitive Peak Surge Current
(aurge applied at rated load
condition!, lee Figure 5)
I
2
t Rating (non-repetitive, lor t
greater than 1
mm
and leas
than 8.3 nil)
Operating ind Storage Junction
Temperature Range
Symbol
v
RM(rep)
v
RU(wkg)
|1
1
I
1
1
1
SO
ii
too 1000
1200
700
580
Unit
100
200
300
400 900 800
Volte
VR
v
RM(non-rep)
100 200
)S
70
300
MO 900 800
720
1000
140 210
280
390 420
Volte
volte
Amp
v>
'o
'FM(surge)
25
300 (tor 1/2 cycle)
Amp
A
Tj. T
8t([
379
A
(rmi)
2l
«
-«9to+i79
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
»JC
Max
1.2
Unit
°C/Watt
MECHANICAL CHARACTERISTICS
CASE: Welded
FINISH: AH external surfaces corrosion-resistant and the terminal lead is readily
solderable.
POLARITY: CATHODE TO CASE (reverse polarity units are available upon request and
are designated by an "R" suffix
MOUNTING POSITIONS: Any,
Quality Semi-Conductors
Embedded System
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