DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D252
CGY887B
860 MHz, 27.8 dB gain push-pull
amplifier
Product specification
2001 Nov 27
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
FEATURES
•
Excellent linearity
•
High gain
•
Extremely low noise
•
Excellent return loss properties
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Side view
handbook, halfpage
CGY887B
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
DESCRIPTION
1
2
3
5
7
8
9
MSA319
Hybrid dynamic range amplifier module in a SOT115J
package operating at a voltage supply of 24 V (DC),
employing both GaAs and Si dies.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 45 MHz
f = 870 MHz
V
B
= 24 V
MIN.
27.2
28
295
MAX.
27.8
29
325
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage (single tone)
storage temperature
operating mounting base temperature
PARAMETER
−
−
−40
−20
MIN.
MAX.
30
70
+100
+100
V
dBmV
°C
°C
UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
CHARACTERISTICS
Bandwidth 45 to 870 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω.
SYMBOL
G
p
SL
FL
PARAMETER
power gain
slope straight line
flatness straight line
f = 45 MHz
f = 870 MHz
f = 45 to 870 MHz
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
s
11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
21
CTB
X
mod
CSO
NF
phase response
composite triple beat
cross modulation
composite second
order distortion
noise figure
f = 50 MHz
79 chs flat; V
o
= 44 dBmV; f
m
= 331.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 445.25 MHz
79 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
79 chs flat; V
o
= 44 dBmV; f
m
= 54.0 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
d
2
second order distortion
note 1
note 2
CONDITIONS
MIN.
27.2
28
0.5
−0.25
−0.5
−0.4
24
22
19
18
17
16
14
12
23
22
18
17
17
17
14
12
−45
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
27.5
28.5
1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CGY887B
MAX.
27.8
29
1.5
+0.25
+0.5
+0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
+45
−63.5
−57.5
−57
−51
−64
−58
5
5
5
5
−60
−57
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
2001 Nov 27
3
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
CGY887B
SYMBOL
V
o
I
tot
Notes
PARAMETER
output voltage
total current
consumption (DC)
CONDITIONS
d
im
=
−60
dB; note 3
d
im
=
−60
dB; note 4
note 5
MIN.
66
64
295
TYP.
−
−
310
MAX.
−
−
325
UNIT
dBmV
dBmV
mA
1. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 493.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
2. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 805.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
3. Measured according to DIN45004B: f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
−6
dB; f
r
= 549.25 MHz;
V
r
= V
o
−6
dB; measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
4. Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
−6
dB; f
r
= 860.25 MHz;
V
r
= V
o
−6
dB; measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
5. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 27
4
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
CGY887B
SOT115J
D
E
Z
p
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
y
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.1
b
c
d
D
E
max. max. max.
e
e1
F
L
min.
8.8
p
4.15
3.85
Q
max.
2.4
q
q1
q2
S
U1
max.
U2
8
W
w
y
0.1
Z
max.
3.8
mm 20.8
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25
UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-02-06
2001 Nov 27
5
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