DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ18A
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN
1
2
3
DESCRIPTION
Code: FF
emitter
collector
base
1
Bottom view
2
page
BFQ18A
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
d
im
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
intermodulation distortion
up to T
s
= 155
°C
(note 1)
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
°C
I
C
= 0; V
CE
= 10 V; f = 10.7 MHz
I
C
= 80 mA; V
CE
= 10 V; R
L
= 75
Ω;
V
o
= 700 mV; measured at
f
(p+q-r)
= 793.25 MHz
open base
CONDITIONS
open emitter
TYP. MAX. UNIT
−
−
−
−
4
1.2
−
25
18
150
1
−
−
−60
V
V
mA
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 155
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
MAX.
25
18
2
150
1
150
175
UNIT
V
V
V
mA
W
°C
°C
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
h
FE
C
c
C
e
C
re
f
T
d
im
Note
1. I
c
= 80 mA; V
CE
= 10 V; R
L
= 75
Ω;
V
p
= V
o
= 700 mV; f
p
=795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q-r)
= 793.25 MHz.
PARAMETER
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
intermodulation distortion (see Fig.2)
CONDITIONS
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 10.7 MHz
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz
note 1
MIN.
25
−
−
−
−
−
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 155
°C
(note 1)
BFQ18A
THERMAL RESISTANCE
20 K/W
TYP.
−
2
11
1.2
4
−60
UNIT
pF
pF
pF
GHz
dB
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
handbook, halfpage
handbook, halfpage
120
5
µH
200
Ω
5
µH
10 kΩ
L1
10 nF
1.5 nF
VBB
VCC
2.2 nF
h FE
80
10 nF
4.7 nF
DUT
2.2 nF
0.68
pF
12
Ω
0
0
40
80
120
160
I C (mA)
RL
40
0.68 pF
MBB829
f = 40
−
860 MHz.
V
CE
= 10 V; T
j
= 25
°C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
8
MBB357
fT
(GHz)
6
4
2
0
0
40
80
120
I C (mA)
160
V
CE
= 10 V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BFQ18A
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
September 1995
5
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