UNISONIC TECHNOLOGIES CO., LTD
MJE13003-P
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
These devices are designed for high-voltage and high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
MJE13003L-P-x-T60-K
MJE13003L-P-x-T6C-A-K
MJE13003L-P-x-T6C-F-K
MJE13003L-P-x-T6S-K
MJE13003L-P-x-T92-B
MJE13003L-P-x-T92-K
MJE13003L-P-x-T92-R
MJE13003L-P-x- T9N -B
MJE13003L-P-x- T9N -K
MJE13003L-P-x- T9N -R
MJE13003L-P-x-TM3-T
MJE13003L-P-x-TN3-R
MJE13003L-P-x-TN3-T
Halogen-Free
MJE13003G-P-x-T60-K
MJE13003G-P-x-T6C-A-K
MJE13003G-P-x-T6C-F-K
MJE13003G-P-x-T6S-K
MJE13003G-P-x-T92-B
MJE13003G-P-x-T92-K
MJE13003G-P-x-T92-R
MJE13003G-P-x-T9N-B
MJE13003G-P-x- T9N -K
MJE13003G-P-x- T9N -R
MJE13003G-P-x-TM3-T
MJE13003G-P-x-TN3-R
MJE13003G-P-x-TN3-T
Package
TO-126
TO-126C
TO-126C
TO-126S
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
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Copyright © 2013 Unisonic Technologies Co., Ltd
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MJE13003-P
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
TO-126 / TO-126C
TO-126S
TO-92 / TO-92NL
TO-251 / TO-252
TO-126 / TO-126C
TO-126S
TO-92 / TO-92NL
TO-251 / TO-252
NPN SILICON TRANSISTOR
RATINGS
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
1.1
1.56
20
UNIT
V
V
V
A
A
A
W
W
W
W
W
W
°C
°C
T
A
=25°C
Total Power Dissipation
T
C
=25°C
P
D
1.5
25
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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PARAMETER
OFF CHARACTERISTICS
(Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
T
C
=25°C
T
C
=100°C
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
TEST CONDITIONS
MIN TYP MAX UNIT
400
1
5
1
See Fig.5
See Fig.6
I
C
=0.4A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.2A, I
B
=0.4A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=100mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
14
5
57
30
0.5
1
3
1
1
1.2
1.1
10
21
V
mA
mA
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS
(Note)
DC Current Gain
V
CEO(SUS)
I
C
=10 mA , I
B
=0
V
CEO
=Rated Value,
I
CEO
V
BE(OFF)
=1.5 V
I
EBO
V
EB
=9 V, I
C
=0
Is/b
RB
SOA
h
FE1
h
FE2
V
CE(SAT)
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
V
BE(SAT)
V
f
T
C
OB
4
MHz
pF
t
D
t
R
t
S
t
F
t
STG
t
C
t
F
V
CC
=125V, I
C
=1A, I
B1
=I
B2
=0.2A,
t
P
=25μs, Duty Cycle≤1%
0.05
0.5
2
0.4
0.1
1
4
0.7
μs
μs
μs
μs
μs
μs
μs
I
C
=1A, Vclamp=300V, I
B1
=0.2A,
V
BE(OFF)
=5Vdc, T
C
=100°C
1.7
4
0.29 0.75
0.15
CLASSIFICATION OF h
FE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
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APPLICATION INFORMATION
NPN SILICON TRANSISTOR
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
1N4933
0.001μF
33
MJE210
L
MR826
Ic
I
B
T.U.T.
2N2905
47
1/2W
MJE200
100
-V
BE
(
OFF
)
5.1k
51
V
clamp
Vcc
Resistive
Switching
+125V
Rc
TUT
SELECTED FOR
V
CE
1kV
Test Circuits
5V
P
w
DUTY CYCLE 10%
t
R
, t
F
10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF 270
1k
R
B
R
B
D1
-4.0V
SCOPE
Note:
P
W
and Vcc Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Coil Data :
GAP for 30 mH/2 A
V
CC
=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
V
CC
=125V
R
C
=125Ω
D1=1N5820 or
Equiv.
R
C
=47Ω
Table 2. Typical Inductive Switching Performance
Ic
(A)
0.5
Tc
(°C)
25
100
25
100
25
100
t
sv
(µs)
1.3
1.6
1.5
1.7
1.8
3
t
RV
(µs)
t
FI
(µs)
t
TI
(µs)
tc
(µs)
I
C
I
CPK
90% V
clamp
t
sv
t
RV
t
c
V
CLAMP
90% Ic
t
FI
t
TI
Test Waveforms
Circuit
Values
0.23 0.30
0.26 0.30
0.10
0.13
0.35 0.30
0.40 0.36
1
0.14 0.05 0.16
0.26 0.06 0.29
V
CE
I
B
90% I
B1
10% V
CLAMP
10%
I
CPK
2% Ic
1.5
0.07 0.10 0.05 0.16
0.08 0.22 0.08 0.28
Time
Fig.1 Inductive Switching Measurements
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
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SWITCHING TIMES NOTE
NPN SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
t
SV
= Voltage Storage Time, 90% I
B1
to 10% Vclamp
t
RV
= Voltage Rise Time, 10 ~ 90% Vclamp
t
FI
= Current Fall Time, 90 ~ 10% I
C
t
TI
= Current Tail, 10 ~ 2% I
C
t
C
= Crossover Time, 10% Vclamp to 10% I
C
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
P
SWT
= 1/2 V
CC
I
C
(t
C
) f
In general, t
RV
+ t
FI
≈
t
C
. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (t
C
and t
SV
) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
10
7
1
0.7
0.5
t
R
Vcc=125V
Ic/I
B
=5
T
J
=25°C
Time, t (°C)
t
s
5
3
2
Vcc=125V
Ic/I
B
=5
T
J
=25°C
Time, t (°C)
0.3
0.2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
t
D
@ V
BE(OFF)
=5V
t
F
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
10
20
0.1
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1
2
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Fig.2 Turn-On Time
Fig.3 Turn-Off Time
Effective Transient Thermal
Resistance, R(t) (Normalized)
Fig.4 Thermal Response
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