Crystal oscillator
CRYSTAL OSCILLATOR
PROGRAMMABLE
SG - 8002LA
/
LB
series
•Frequency
range
:
1 MHz to 125 MHz
•Supply
voltage
:
3.3 V or 5.0 V
•Function
:
Output enable(OE) or Standby(
ST
)
•Thickness
:
1.15 mm Typ.(SG-8002LA)
•Lead(Pb)-free
:
Lead free completely
•Short
mass production lead time by PLL technology.
•SG-Writer
available to purchase.
Please contact EPSON TOYOCOM or local sales representative.
Actual size
SG-8002LA
SG-8002LB
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Temperature
range
Operating temperature
Frequency tolerance
Current consumption
Output disable current
Stand-by current
Symmetry
*1
High output voltage
Low output voltage
Output load condition(CMOS)
*1
Output enable / disable
input voltage
Output rise and fall time
*1
Oscillation start up time
Frequency aging
Symbol
f
0
V
CC
T_stg
T_use
F_tol(osc)
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
tr / tf
Specifications
*2
PH
/
SH
PC
/
SC
1 MHz to 80 MHz
-
-
1 MHz to 125 MHz
-
1 MHz to 66.7 MHz
4.5 V to 5.5 V
2.7 V to 3.6 V
-40
°C
to +125
°C
-20
°C
to +70
°C
(-40
°C
to +85
°C)
B:
±50 ×
10
-6
,C:
±100 ×
10
-6
M:
±100 ×
10
-6
*3
-
L:
±
50
×
10
-6
30 mA Max.
-
-
28 mA Max.
25 mA Max.
-
-
16 mA Max.
50
µA
Max.
40 % to 60 %
-
45 % to 55 %
-
-
40 % to 60 %
-
40 % to 60 %
-
45 % to 55 %
V
CC
-0.4 V Min.
0.4 V Max.
15 pF Max.
2.0 V Min.
70 % V
CC
Min.
0.8 V Max.
20 % V
CC
Max.
3 ns Max.
10 ms Max.
±5 ×
10
-6
/ year Max.
Remarks
V
CC
=4.5 V to 5.5 V
V
CC
=3.0 V to 3.6 V
V
CC
=2.7 V to 3.6 V
Stored as bare product after unpacking
Refer to “Frequency range” (P.4)
-20
°C
to +70
°C
-40
°C
to +85
°C
-40
°C
to +85
°C,
V
CC
±5
%
*3
No load condition, f
0
=80 MHz
No load condition, f
0
=125 MHz
P Type only, f
0
=80 MHz
P Type only, f
0
=125 MHz
S Type only,
ST
=GND
50 % V
CC
, L_CMOS=15 pF,
≤80
MHz
50 % V
CC
, L_CMOS=25 pF,
≤50
MHz
50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
≤125
MHz
50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
≤66.7
MHz
50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
≤40
MHz
I
OH
=-16 mA(PH,SH),-8 mA(PC,SC)
I
OL
= 16 mA(PH,SH), 8 mA(PC,SC)
Max. frequency and Max. supply voltage
ST
, OE terminal
ST
, OE terminal
20 % V
CC
to 80 % V
CC
level, L_CMOS=Max.
Time at minimum supply voltage to be 0 s
+25
°C,V
CC
=5.0 V/ 3.3 V (PC
/
SC) First year
t
OSC
F_aging
*1
*2
*3
.
Operating temperature (-40
°C
to +85
°C),
the available frequency, symmetry and output load conditions, please refer to Page 48.
PLL-PLL connection & Jitter specification, please refer to Page 49.
PH,SH for “M” tolerance and “L” tolerance will be available up to 27 MHz. Checking possible by the Frequency checking program.
External dimensions
SG -8 002LA
#4
#3
#3
(Unit:mm)
0.35
SG -8 002LB
(0.1)*1 0.57
#4
5.0
±
0.2
2.74 ± 0.07
#4
#3
Pin m ap
Pi n
Con nectio n
1
OE o r
ST
2
G ND
3
OUT
4
Vcc
(0.4) 1.6
27.00B
FC81A
#1
#2
2.6 ± 0.1
3.3 ± 0 .1
(0.1)
1.15± 0.05
#2
#1
PC C21A
#1
#2
0.45
2.20
(0.1)*1
Pin m ap
Pi n. Con nectio n
1
OE o r
ST
2
G ND
3
OUT
4
Vcc
1.2max
3.2
±0.2
2.8
E1 25.0B
0.1
1.0
*1 Th e termin al of #1 p in may loo k the sa me as #2 to # 4 pin .
Me ta l may be expo se d on the to p or bo ttom o f this pr odu ct.This will no t affect a ny qua lity, re liab ility o r ele ctri ca l spec.
Note.
S T
pin (S H, S C)
OE p in (P H, P C)
OE p in = "H" or "ope n" : Specifie d fr equ ency outpu t.
S T
pin = "H" o r "op en" : Spe cifi ed freq uen cy ou tp ut.
S T
pin = "L" : O utput is low level (wea k p ull - do wn),oscilla ti on stops.
OE p in = "L" : Ou tp ut is h igh im ped ance .
2.54
0min.
(0.35)
2.5
(0.35)
Footprint (Recommended)
SG-8002LA
0.85
0.97
(Unit:mm)
SG-8002LB
1.6
1.5
2.54
2.17
2.65
44
http://www.epsontoyocom.co.jp
2.2
Crystal oscillator
SG-8002 Series Specifications
Item
Page
Model
Current
Consumption
Supply
Voltage
Output load condition
Output rise time
Output fall time
3.0 ns Max.
(20 %V
CC
to 80 %V
CC
,
L_CMOS=Max.)
Symmetry
Function
OE
PH
SG-8002LA
(SON 4-pin)
44
SG-8002LB
(SOJ 4-pin)
SH
PC
SC
PT
35 mA
Max.
4.5 V to 5.5 V
15 pF
40 % to 60 %(50 %V
CC
,L_CMOS=15 pF,f
0
≤80
MHz/-40°C to+85°C)
ST
OE
ST
OE
ST
OE
ST
28 mA
Max.
3.0 V to 3.6 V
15 pF
(2.7 V to 3.6 V)
3.0 ns Max.
(20 %V
CC
to 80 %V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 %V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤40
MHz)
40 % to 60 %(50 %V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤125
MHz)
↑
(50 %V
CC
,L_CMOS=15 pF
CC
=2.7 V to 3.6 V,f
0
≤66.7
MHz)
,V
SG-8002CA
(SON)
45
46
47
SG-8002JA
(SOJ 4-pin)
SG-8002DB
(DIP 14-pin)
ST
PH
SH
45 mA
Max.
4.5 V to 5.5 V
5 TTL+15 pF
(f
0
≤125MHz/-20°C
to+70°C)
25 pF
(f
0
≤66.7
MHz/-20°C to+70°C)
5 TTL+15 pF
(f
0
≤
40 MHz/-40°C to +85°C)
15 pF(f
0
≤55
MHz/-40°C to +85°C)
25 pF
(f
0
≤125
MHz/-20°C to+70°C)
50 pF
(f
0
≤66.7
MHz/-20°C to+70°C)
15 pF
(f
0
≤55
MHz/-40°C to+85vC )
25 pF
(f
0
≤40
MHz/-40°C to+85°C)
15 pF
(f
0
≤66.7
MHz/2.7 to 3.6 V)
15 pF
(f
0
≤125
MHz/3.0 to 3.6 V)
30 pF
(f
0
≤40
MHz/3.0 to 3.6 V)
5TTL + 15 pF
(f
0
≤90
MHz/-20 to+70°C )
15 pF
(f
0
≤125
MHz/-20°C to +70°C )
25 pF
(f
0
≤66.7
MHz/-20°C to+70°C )
15 pF
(f
0
≤125
MHz/-20°C to+70°C )
25 pF
(f
0
≤90
MHz/-20°C to+70°C)
50 pF
(f
0
≤66.7
MHz/-20°C to+70°C)
15 pF
(f
0
≤66.7
MHz/2.7 to 3.6 V)
15 pF
(f
0
≤125
MHz/3.0 to 3.6 V)
30 pF
(f
0
≤40
MHz/3.0 to3.6 V)
15 pF
(f
0
≤125
MHz/-20°C to +70°C )
25 pF
(f
0
≤66.7
MHz/-20°C to+70°C)
5TTL + 15 pF
(f
0
≤
90 MHz/-20°C to +70°C)
15 pF
(f
0
≤40
MHz/-40°C to +85°C)
15 pF
(f
0
≤125
MHz/-20°C to+70°C )
25 pF
(f
0
≤90
MHz/-20°C to+70°C)
50 pF
(f
0
≤50
MHz/-20°C to+70°C)
15 pF
(f
0
≤40
MHz/-40°C to+85°C)
15 pF(f
0
≤66.7
MHz/2.7 to 3.6 V)
30 pF(f
0
≤40
MHz/3.0 to 3.6 V)
2.0 ns Max.
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤66.7
MHz/-20°C to +70°C)
(0.8 V to 2.0 V,
L_CMOS or L_TTL=Max.)
↑
(1.4 V,L_TTL=5 TTL+15 pF
0
≤40.0
MHz/-40°C to +85°C)
,f
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤125
MHz/-20°C to +70°C)
4.0 ns Max.
↑
(1.4 V,L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
(0.4 V to 2.4 V,
↑
(1.4 V,L_CMOS=15 pF,f
0
≤55.0
MHz/-40°C to +85°C)
L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
,L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
↑
(50 % V
CC
,L_CMOS=25 pF,f
0
≤40.0
MHz/-40°C to +85°C)
40 % to 60 %(50 % V
CC
,L_CMOS=25 pF,f
0
≤125
MHz/-20°C to +70°C)
↑
(50 % V
CC
,L_CMOS=50 pF,f
0
≤66.7
MHz/-20°C to+70°C)
↑
(50 % V
CC
,L_CMOS=15 pF,f
0
≤55.0
MHz/-40°C to +85°C)
SG-8002DC
PC
(DIP 8-pin)
SC
PT
ST
SG-8002JC
(SOJ 4-pin)
28 mA
Max.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
45 % to 55 %(50 % V
CC
,L_CMOS=30 pF,V
CC
=3.0 V to 3.6 V,f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤125
MHz)
↑
(50 % V
CC
,L_CMOS=15 pF,V
CC
=2.7 V to 3.6 V,f
0
≤66.7
MHz)
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
PH
SH
PC
SC
PT
ST
PH
45 mA
Max.
4.5 V to 5.5 V
2.0 ns Max.
(0.8 V to 2.0 V,
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤66.7
MHz/-20°C to+70°C)
L_CMOS or L_TTL=Max.)
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤90.0
MHz/-20°C to+70°C)
↑
(1.4 V,L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
4.0 ns Max.
↑
(1.4 V,L_CMOS=15 pF,f
0
≤125
MHz/-20°C to +70°C)
(0.4 V to 2.4 V,
L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
25)
4.0 ns Max.
(20 % Vv to 80 % V
CC
,
L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V
,L_CMOS
≤
25)
4.0 ns Max.
(0.4 V to 2.4 V
,L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS
≤
15)
4.0 ns Max.
(20 % Vcc to 80 % Vcc,
L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,
L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,
L_TTL=Max.)
45 % to 55 %(50 % V
CC
,
L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,f
0
≤125
MHz/-20°C to +70°C)
↑
(50 % V
CC
,L_CMOS=25 pF,f
0
≤90
MHz/-20°C to +70°C)
↑
(50 % V
CC
,L_CMOS=50 pF,f
0
≤50
MHz/-20°C to +70°C)
46
28 mA
Max.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
45 % to 55 %(50 % V
CC
,L_CMOS=30 pF,V
CC
=3.0 V to 3.6 V,f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤125
MHz)
↑
(50 % V
CC
,L_CMOS=15 pF,V
CC
=2.7 V to 3.6 V,f
0
≤66.7
MHz)
45 mA
Max.
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤66.7
MHz/-20°C to+70°C)
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤90
MHz/-20°C to +70°C)
↑
(1.4 V, L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
↑
(1.4 V, L_CMOS=15 pF,f
0
≤125
MHz/-20°C to +70°C)
↑
(1.4 V, L_CMOS=15 pF,f
0
≤40
MHz/-40°C to +85°C)
4.5 V to 5.5 V
45
SG-8002JF
(SOJ 4-pin)
SH
PC
SC
PT
ST
40 mA
Max.
45 % to 55 %(50 % V
CC
,L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C )
40 % to 60 %(50 % V
CC
,L_CMOS=25 pF,f
0
≤90.0
MHz/-20°C to +70°C )
↑
(50 % V
CC
,L_CMOS=50 pF,f
0
≤50.0
MHz/-20°C to+70°C)
↑
(50 % V
CC
,L_CMOS=15 pF,f
0
≤125
MHz/-20°C to+70°C )
↑
(50 % V
CC
,L_CMOS=15 pF,f
0
≤40
MHz/-40°C to+85°C)
28 mA
Max.
3.0 V to 3.6 V
15 pF(f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
45 % to 55 %(50 % V
CC
,L_CMOS=30 pF,V
CC
=3.0 V to 3.6 V,f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤125
MHz)
↑
(50 % V
CC
,L_CMOS=15 pF,V
CC
=2.7 V to 3.6 V,f
0
≤66.7
MHz)
5 TTL+15 pF
(f
0
≤125
MHz/-20°C to + 70°C)
5 TTL+15 pF
(f
0
≤27
MHz/-40°C to +85°C )
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤66.7
MHz/-20°C to +70°C)
↑
(1.4 V,L_TTL=5 TTL+15 pF
0
≤27.0
MHz/-40°C to + 85°C)
,f
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,f
0
≤125
MHz/-20°C to +70°C)
OE
ST
OE
ST
OE
ST
4.5 V to 5.5 V
15 pF
(f
0
≤125
MHz/-20°C to +70°C )
25 pF
(f
0
≤100
MHz/-20°C to+70°C )
25 pF
(f
0
≤27
MHz/-40°C to +85°C )
15 pF
(f
0
≤66.7
MHz/2.7 to 3.6 V)
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF
(f
0
≤125
MHz/3.0 to 3.6 V)
43
SG-8002CE
(SON)
PH
SH
PC
SC
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
,L_CMOS=25 pF,f
0
≤66.7
MHz/-20°C to +70°C)
↑
(50 % V
CC
,L_CMOS=25 pF,f
0
≤27.0
MHz/-40°C to + 85°C)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,f
0
≤125
MHz/-20°C to +70°C)
28 mA
Max.
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
,L_CMOS=15 pF,V
CC
=3.0 V to 3.6 V,f
0
≤125
MHz)
↑
(50 % V
CC
,L_CMOS=15 pF,V
CC
=2.7 V to 3.6 V,f
0
≤66.7
MHz)
48
http://www.epsontoyocom.co.jp
Crystal oscillator
SG-8002 series and HG-8002 series
■
PLL-PLL connection
Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another
PLL-oscillator.
In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video
clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL=15 pF)
■
Remarks on noise management for power supply line
We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction.
This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive.
When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation.
Start up time (0 % V
CC
to 90 % V
CC
) of power source should be more than
150
µs.
■
Jitter Specifications
Model
PT
/
PH
ST
/
SH
SC
/
PC
Supply
Voltage
5 V
±0.5
V
Peak to peak
3.3 V
±0.3
V
Cycle to cycle
Peak to peak
Jitter Item
Cycle to cycle
Specifications
150
ps Max.
200 ps Max.
200 ps Max.
250 ps Max.
200 ps Max.
250 ps Max.
Remarks
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
■
SG-8002 series Characteristics chart
50
40
I
CC
(mA)
30
20
10
0
50
40
I
_dis
(mA)
30
20
10
0
50
40
I
_std
(
µ
A)
30
20
10
2.5
3.0 3.5 4.0 4.5 5.0
Vcc (V)
5.5 6.0
20
40 60 80
100 120 140
Frequency(MHz)
Stand-by Current
20
40 60 80
100 120 140
Frequency(MHz)
Current consumption
(Vcc=5.0V)
60
Symmetry (%)
55
50
45
40
0
60
Symmetry (%)
55
50
15
pF
50 pF
Symmetry 5.0 V CMOS Level
25 pF
3.0
Output Rise time (CMOS Level)
2.5
Rise time (ns)
15
pF
3.0 V
3.3 V
3.6 V
2.7 V
4.5 V
5.0 V
5.5 V
2.0
1.5
20
40 60 80
100 120 140
Frequency(MHz)
1.0
10
15
20 25 30 35 40 45
50 55
Disable Current
(Vcc=5.0V)
Symmetry 3.3 V CMOS Level
3.0
30 pF
Load capacitance (pF)
Output Fall time (CMOS Level)
3.0 V
3.3 V
3.6 V
4.5 V
5.0 V
5.5 V
Fall Time (ns)
2.5
45
40
0
20
40 60 80
100 120 140
Frequency(MHz)
2.0
2.7 V
1.5
60
Symmetry (%)
55
50
45
40
0
Symmetry 5.0V TTL Level
1.0
10 15
20 25 30 35 40 45
50 55
Load capacitance (pF)
25 pF
15
pF
2.0
Rise Time (ns)
1.5
1.0
Output Rise time (TTL Level)
4.5 V
5.0 V
5.5 V
20
40 60 80
100 120 140
Frequency(MHz)
10
2.0
Fall Time (ns)
Additional Value (mA)
Output load vs. Additional Current consumption
20
Vcc=5.0 V
18
25 pF
16
14
50 pF
12
15
pF
10
30 pF
8
6
4
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.5
Voltage coefficient [
Vcc vs I
OP
,I
OE
]
I
OP
(Va)=Times(Va)×I
OP
(5.0V)
I
OE
(Va)=Times(Va)×I
OE
(5.0V)
15
20
25
Load capacitance (pF)
Output Fall time (TTL Level)
30
Times
1.5
4.5 V
5.0 V
5.5 V
1.0
0
20
40 60 80
100 120 140
Frequency(MHz)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Vcc (V)
10
15
20
25
Load capacitance (pF)
30
http://www.epsontoyocom.co.jp
49
End to End EPSON TOYOCOM
The development of our ubiquitous network society has caused
a diversification of applications and has increased the demand for
high-level quartz devices in terms of quality, quantity, and
function.
The Quartz Device Operations Division of SEIKO EPSON
CORPORATION (EPSON)and TOYO COMMUNICATION
EQUIPMENT CO.,LTD.(TOYOCOM) were integrated on October
1,2005 to establish a new company, EPSON TOYOCOM
CORPORATION, to meet these market and customer demands.
Each company contributes its own strength; EPSON holds a
strong presence in consumer products and TOYOCOM is strong
in industrial products. The consolidation of these two companies
in a new company that provides advanced expertise with a wide
range of products for terminals and infrastructure to our
customers.
Quartz device have become crucial in the network environment
where products are increasingly intended for broadband,
ubiquitous applications and where various types of terminals can
transfer information almost immediately via LAN and WAN on a
global scale. EPSON TOYOCOM CORPORATION addresses
every single aspect within a network environment. The new
corporation offers “end-to-end” solutions to problems arising with
products for consumer use, such as core network systems and
automotive systems.
PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM
CONFORMING INTERNATIONAL STANDARD
At EPSON TOYOCOM, all environmental initiatives operate under the Plan-Do-Check-Action(PDCA) cycle designed to achieve continuous
improvements. The environmental management system (EMS) operates under the ISO 14001 environmental management standard.
In May 2001, all of our major manufacturing and non-manufacturing sites, in Japan and overseas, completed the acquisition of ISO 14001 certification.
In the future, new group companies will be expected to acquire the certification around the third year of operations.
ISO 14000 is an international standard for environmental
management that was established by the International
Standards Organization in 1996 against the background
of growing concern regarding global warming, destruction
of the ozone layer, and global deforestation.
WORKING FOR HIGH QUALITY
EPSON TOYOCOM quickly began working to aquire company-wide ISO 9000 series certification, and has acquired ISO 9001 or ISO 9002 certification
with all targeted products manufactured in Japanese and overseas plants.
The Quartz Device Operations Division (Ina Japan,EPM and SZE) have acquired QS-9000 certification, which are of higher Level.
Also QS-9000 and TS 16949 certification, which is of higher level, has been acquired.
QS-9000 is an enhanced standard for quality
assurance systems formulated by leading
U.S.automobile manufacturers based on
the international ISO 9000 series.
ISO/TS 16949 is a global standard based on
QS-9000, a severe standard corresponding to
the requirements from automobile industry.
Notice
●The
material is subject to change without notice.
●Any
part of this material may not be reproduced or duplicated in any form or any means without the written permission of EPSON TOYOCOM.
●The
information, applied circuit, program, usage etc., written in this material is just for reference. EPSON TOYOCOM does not assume any liability for
the occurrence of infringing any patent or copyright of a third party. This material does not authorize the licensing for any patent or intellectual
copyrights.
●Any
product described in this material may contain technology or the subject relating to strategic products under the control of the Foreign
Exchange and Foreign Trade Law of Japan and may require an export licence from the Ministry of International Trade and industry or other
approval from another government agency.
●These
products are intended for general use in electronic equipment. When using them in specific applications that require extremely high reliability
such as applications stated below, it is required to obtain the permission from EPSON TOYOCOM in advance.
/ Space equipment (artificial satellites, rockets, etc) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc)
/ Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment
/ traffic control equipment / and others requiring equivalent reliability.
●
In this new crystal master for EPSON TOYOCOM, product code and marking will still remain as previously identified prior to the merger.
Due to the on going strategy of gradual unification of part numbers, please review product code and marking as they will change during the course of
the coming months.
We apologize for the inconvenience, but we will eventually have a unified part numbering system for Epson Toyocom which will be user friendly.
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