M1---M7
SURFACE MOUNT RECTIFIERS
FEATURES
For surface mounted applications
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropnol
and similar solvents
The plastic material carries U/L
recognition 94V-0
DO-214AC(SMA)
4.5± 0.1
5.1± 0.2
Case: JEDEC
DO-214AC,molded
plastic
Terminals: Solder plated, solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 grams
Mounting position: Any
2.1± 0.2
MECHANICAL DATA
0.203MAX
1.3± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current
@T
L
=110
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load T
J
=125
Maximum instantaneous forward
voltage at 1.0 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=100
Typical junction capacitance (Note1)
Typical thermal resistance (Note2)
Operating temperature range
Storage temperature range
2. Thermal resistance from junction to ambient
M1
50
35
50
M2
70
M3
200
140
200
M4
400
280
400
M5
600
420
600
M6
800
560
800
2.6± 0.15
0.2± 0.05
1.5± 0.1
MA
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
KO
SE
MI
CO
ND
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
STG
UC
MAKO SEMICONDUCTOR CO.,LIMITED
Page: P2 - P1
TO
100
100
M7
UNITS
1000
700
1000
V
V
V
A
A
V
µA
pF
R
CO
1.0
30
1.1
5.0
50
15
75
-
55
--- + 150
-
55
--- + 150
.,
LI
http://www.makosemi.hk/
MI
TE
/
W
D
M1---M7
FIG.1 -- FORWARD DERATING CURVE
1.2
Resistive or
inductive Load
FIG.2 PEAK FORWARD SURGE CURRENT
10 0
T
L
= 11 0 C
8 .3 m s S in g le H a lf S in e
(J E D E C M e th o d )
O
1.0
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD
CURRENT,AMPERES
W a ve
0.8
30
INSTANTANEOUS FORWARD
CURRENT,AMPERES
INSTANTANEOUS REVERSE
CURRENT MICROAMPERES
JUNCTION CAPACITANCE pF
TRANSIENT THERMAL
IMPEDANCE, /W
MA
0.6
10
0.4
KO
0.2
0
0
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
1
1
10
10 0
20
40
60
80
100
120
140
160
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
10
1
0.01
SE
100
10
1
0.1
0.01
0.4
0.6
0.8
AMBIENT TEMPERATURE
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
MI
Puise Width=300
1%DUTY CYCLE
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
1.0.
CO
ND
T
J
=25 C
O
10
T
J
=125 C
O
UC
1.8
2.0
T
J
=25 C
f=1.0MHZ
Vsig=50mVp-p
0
1
T
J
=75 C
O
0.1
TO
R
1.6
S
0.01
T
J
=25
O
C
1.2
1.4
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
CO
100
10
1
FIG.6-TRANSIENT THERMAL IMPEDANCE
.,
LI
MI
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
TE
D
0.1
1
10
100
0.1
0.01
0.1
1
10
100
PULSE DURATON,SEC
MAKO SEMICONDUCTOR CO.,LIMITED
Page: P2 - P2
http://www.makosemi.hk/
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