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MB1S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size99KB,2 Pages
ManufacturerMAKO
Websitehttp://www.makosemi.hk
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MB1S Overview

BRIDGE RECTIFIER DIODE

MB1S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
MB05S
THRU
MB10S
Features
Surface Mount Package
Glass Passivated Diode Construction
Moisture Resistant Epoxy Case
High Surge Current Capability
0.5Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Device
Marking
Maximum
Rccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
ico
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
rC
o.
,
-
E
C
A
+
K
J
H
G
L









M

    


.252



.017
.090
.004
.021
.055
-----

.040
.008


.272



.029
.106
.008
.023
.065
.200

.050
.014
to
uc
Li
m
MBS -1
B
D
M
N



6.40



0.45
2.30
0.10
0.53
1.40
-----

1.02
0.15
nd
Average Forward
I
F(AV)
0.5A
Note1 T
A
= 30°C
Note2 T
A
= 30°C
0.8A
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
1.0V
I
FM
= 0.5A;
Instantaneous
V
F
Forward Voltage
T
A
= 25°C
Maximum DC
Reverse Current At
I
R
5
µA
T
A
= 25°C
Rated DC Blocking
Voltage
Typical Junction
C
J
25pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )
solder pad.
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
Se
m
Electrical Characteristics @ 25°C Unless Otherwise Specified
AK
O
M
MAKO Semiconductor Co., Limited
http://www.makosemi.hk/
ite
F
Notch in case


6.91



0.75
2.70
0.20
0.58
1.65
5.08

1.27
0.35

d
 

MB1S Related Products

MB1S MB05S MB4S MB6S MB8S MB10S MB2S
Description BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE MULTICOMP - MB6S - BRIDGE RECTIFIER; Single PHASE; 800mA; 600V; MBS; FULL REEL 0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
state ACTIVE Active TRANSFERRED - DISCONTINUED ACTIVE ACTIVE
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE bridge rectifier diode - bridge rectifier diode bridge rectifier diode BRIDGE RECTIFIER DIODE

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