Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1650
DESCRIPTION
・With
TO-3PML package
・Built-in
damper diode
・High
breakdown voltage
・High
speed switching
APPLICATIONS
・For
color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
3.5
50
150
-55~150
V
A
W
℃
℃
UNIT
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE
f
T
V
F
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Diode forward voltage
CONDITIONS
I
C
=0.1A , I
B
=0
I
C
=2.5A ;I
B
=0.8A
I
C
=2.5A ;I
B
=0.8A
V
CB
=800V; I
E
=0
V
CES
=1500V; R
BE
=∞
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
I
F
=3.5A
40
8
3
MIN
800
5.0
TYP.
2SD1650
MAX
UNIT
V
8.0
1.5
10
1.0
130
V
V
μA
mA
mA
MHz
2.0
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1650
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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