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FR70D05

Description
Silicon Fast Recovery Diode
File Size724KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR70D05 Overview

Silicon Fast Recovery Diode

FR70B05 thru FR70JR05
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-5 Package
V
RRM
= 100 V - 600 V
I
F
= 70 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR70B(R)05
100
70
100
70
870
-55 to 150
-55 to 150
FR70D(R)05
200
140
200
70
870
-55 to 150
-55 to 150
FR70G(R)05
400
280
400
70
870
-55 to 150
-55 to 150
FR70J(R)05
600
420
600
70
870
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 70 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR70B(R)05
1.0
25
15
FR70D(R)05
1.0
25
15
FR70G(R)05
1.0
25
15
FR70J(R)05
1.0
25
15
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
500
500
500
500
nS
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

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FR70D05 FR70G05 FR70J05
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