1N1190 datasheet, PDF - EEWORLD Datasheet

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1N1190: Description35 A, SILICON, RECTIFIER DIODE, DO-5; CategoryDiscrete semiconductor diode; File Size712KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/; Environmental Compliance

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1N1190 Overview

35 A, SILICON, RECTIFIER DIODE, DO-5

1N1190 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compli
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-5
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	595 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	190 °C
Minimum operating temperature	-65 °C
Maximum output current	35 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N1188 thru 1N1190R

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 400 to 600 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-5 Package

RRM

= 400 V - 600 V

= 35 A

Maximum ratings, at T

= 25 °C, unless otherwise specified

Parameter

Repetitive p

peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

RRM

RMS

F,SM

stg

≤ 140 °C

= 25 °C, t

= 8.3 ms

Conditions

("R" devices have leads reversed)

1N1188 (R)

400

280

400

595

-55 to 150

1N1189 (R)

500

350

500

595

-55 to 150

1N1190 (R)

600

420

600

595

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 35 A, T

= 25 °C

= 50 V, T

= 25 °C

= 50 V, T

= 140 °C

1N1188 (R)

1.2

0.25

1N1189 (R)

1.2

0.25

1N1190 (R)

1.2

0.25

Unit

μA

°C/W

Thermal characteristics

Thermal resistance, junction -

case

thJC

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1N1190 Related Products

	1N1190	1N1188
Description	35 A, SILICON, RECTIFIER DIODE, DO-5	35 A, SILICON, RECTIFIER DIODE, DO-5
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
package instruction	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compli	compli
application	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	CATHODE	CATHODE
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V
JEDEC-95 code	DO-5	DO-5
JESD-30 code	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	595 A	595 A
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Maximum operating temperature	190 °C	190 °C
Minimum operating temperature	-65 °C	-65 °C
Maximum output current	35 A	35 A
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	400 V
Maximum reverse current	10 µA	10 µA
surface mount	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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