DSC1001
1.8~3.3V
Low-Power Precision CMOS Oscillator
General Description
The DSC1001 is a silicon MEMS based CMOS
oscillator offering excellent jitter and stability
performance over a wide range of supply
voltages and temperatures.
The device
operates from 1 to 150MHz with supply voltages
between 1.8 to 3.3 Volts and temperature
ranges up to -40ºC to 105ºC.
The DSC1001 incorporates an all silicon
resonator that is extremely robust and nearly
immune to stress related fractures, common to
crystal based oscillators. Without sacrificing the
performance and stability required of today’s
systems, a crystal-less design allows for a
higher level of reliability, making the DSC1001
ideal for rugged, industrial, and portable
applications where stress, shock, and vibration
can damage quartz crystal based systems.
Available in industry standard packages, the
DSC1001 can be “dropped-in” to the same PCB
footprint as standard crystal oscillators.
Features
Frequency Range: 1 to 150MHz
Exceptional Stability over Temperature
o
±10 PPM, ±25 PPM, ±50 PPM
Operating voltage
o
1.7 to 3.6V
Operating Temperature Range
o
Ext. Industrial -40ºC to 105ºC
o
Industrial -40ºC to 85ºC
o
Ext. Commercial -20ºC to 70ºC
o
Commercial 0ºC to 70ºC
Low Operating and Standby Current
o
5mA Operating (40MHz)
o
15uA Standby
Ultra Miniature Footprint
o
2.5 x 2.0 x 0.85 mm
o
3.2 x 2.5 x 0.85 mm
o
5.0 x 3.2 x 0.85 mm
o
7.0 x 5.0 x 0.85 mm
MIL-STD 883 Shock and Vibration
Resistant
Pb Free, RoHS, Reach SVHC Compliant
AEC-Q100 Reliability Qualified
Benefits
Block Diagram
Pin for pin “drop in” replacement for
industry standard oscillators
Semiconductor level reliability,
significantly higher than quartz
Longer Battery Life / Reduced Power
Compact Plastic package
Cost Effective
V
DD
Output
Resonator
PFD
VCO
Applications
Frac-N
PLL
Standby#
(pin1)
GND
Mobile Applications
Consumer Electronics
Portable Electronics
DVR, CCTV, Surveillance Cameras
Low Profile Applications
Industrial Applications
Page 1
MK-Q-B-P-D-050610-01-8
DSC1001
VDD = 1.8v
Parameter
Supply Current, no load
Output Transition time
Rise Time
Fall Time
Jitter, Max Cycle to Cycle
1.8~3.3V
Low-Power Precision CMOS Oscillator
Symbol
I
DD
Condition
1MHz
C
L
=0p
27MHz
R
L
=∞
70MHz
T=25°C
150MHz
C
L
=15pF; T=25°C
20%/80%*V
DD
F = 100MHz
3
Min
Typ
6.0
6.5
7.2
8.3
1.8
1.0
60
Max
6.3
6.9
7.5
9.1
3
3
Unit
mA
t
R
t
F
J
CC
ns
Ps
VDD = 2.5v
Parameter
Supply Current, no load
Output Transition time
Rise Time
Fall Time
Jitter, Max Cycle to Cycle
Symbol
I
DD
Condition
1MHz
C
L
=0p
27MHz
R
L
=∞
70MHz
T=25°C
150MHz
C
L
=15pF; T=25°C
20%/80%*V
DD
F = 100MHz
3
Min
Typ
6.0
6.7
7.7
9.6
1.0
0.9
50
Max
6.3
7.0
8.1
10.6
2
2
Unit
mA
t
R
t
F
J
CC
ns
ps
VDD = 3.3v
Parameter
Supply Current, no load
Output Transition time
Rise Time
Fall Time
Jitter, Max Cycle to Cycle
Symbol
I
DD
Condition
1MHz
C
L
=0p
27MHz
R
L
=∞
70MHz
T=25°C
150MHz
C
L
=15pF; T=25°C
20%/80%*V
DD
F = 100MHz
3
Min
Typ
6.0
6.8
8.2
10.8
1.0
0.9
50
Max
6.3
7.2
8.7
12.2
2
2
Unit
mA
t
R
t
F
J
CC
ns
ps
Notes:
1.
Absolute maximum ratings are those values beyond which the safety of the device cannot be guaranteed. The device should not be
operated beyond these limits.
2.
t
SU
is time to stable output frequency after V
DD
is applied. t
SU
and t
EN
(after EN is asserted) are identical values.
3.
Measured over 50k clock cycles.
Page 3
MK-Q-B-P-D-050610-01-8
51mcu
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