DIM1000ECM33-TS000
IGBT Chopper Module
Replaces DS6091-2
DS6091-3 September 2014 (LN31962)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
3300V
2.2V
1000A
2000A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
2(G)
3(C)
9(C)
7(C)
5(A)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1000ECM33-TS000 is a 3300V, soft punch
through n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) chopper module. The IGBT
has a wide reverse bias safe operating area (RBSOA)
plus 10μs short circuit withstand. This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
1(E)
8(E)
6(E)
4(K)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1000ECM33-TS000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1000ECM33-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value (IGBT arm)
Diode I t value (Diode arm)
Isolation voltage – per module
Partial discharge – per module
2
2
Test Conditions
V
GE
= 0V
Max.
3300
±20
Units
V
V
A
A
kW
kA s
kA s
V
pC
2
2
T
case
= 110°C
1ms, T
case
= 140°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 3500V, V
2
= 2600V, 50Hz RMS
1000
2000
10.4
320
320
6000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor
Thermal resistance – diode (IGBT arm)
Thermal resistance – diode (Diode arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Storage temperature range
AlN
AlSiC
31mm
20mm
>600
Test Conditions
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
Min
-
-
-
-
-
-
-40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max
12
24
24
8
150
150
125
5
2
10
Units
°C/kW
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000ECM33-TS000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
V
GE
= 0V, V
CE
= V
CES
I
CES
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
V
GE
= 0V, V
CE
= V
CES
, T
case
= 150°C
I
GES
V
GE(TH)
Gate leakage current
Gate threshold voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 80mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1000A
V
CE(sat)
†
Min
Typ
Max
4
60
100
1
Units
mA
mA
mA
μA
V
V
V
V
A
A
V
V
V
nF
μC
nF
nH
5.7
2.2
2.8
3.0
1000
2000
2.4
2.5
2.4
170
17
4
15
25
135
270
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 1000A, T
j
= 125°C
V
GE
= 15V, I
C
= 1000A, T
j
= 150°C
I
F
I
FM
Diode forward current
Diode maximum forward current
DC
t
p
= 1ms
I
F
= 1000A
V
F
†
Diode forward voltage
(IGBT & Diode arm)
I
F
= 1000A, T
j
= 125°C
I
F
= 1000A, T
j
= 150°C
C
ies
Q
g
C
res
L
M
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V Including external C
ge
V
CE
= 25V, V
GE
= 0V, f = 1MHz
IGBT
Diode
IGBT
R
INT
Internal resistance
Diode
T
j
= 150°C, V
CC
= 2500V
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
μ
SC
Data
Short circuit current, I
SC
3700
A
Note:
†
Measured at the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1000ECM33-TS000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2700
520
1950
1000
400
1300
570
615
670
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2750
570
2200
1020
420
1700
935
775
1150
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
T
case
= 150°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2800
550
2300
1030
430
1850
1070
800
1300
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM1000ECM33-TS000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
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51mcu
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