2N5050 datasheet, PDF - EEWORLD Datasheet

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2N5050: Description2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66; Categorysemiconductor Discrete semiconductor; File Size47KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2N5050 Overview

2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66

2N5050 Parametric

Parameter Name	Attribute value
Maximum collector current	2 A
Maximum Collector-Emitter Voltage	150 V
Number of terminals	2
state	Active
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	25
jedec_95_code	TO-66
jesd_30_code	O-MBFM-P2
Number of components	1
Maximum operating temperature	175 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	FLANGE MOUNT
larity_channel_type	NPN
wer_dissipation_max__abs_	40 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	NOT SPECIFIED
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Rated crossover frequency	10 MHz
vcesat_max	1 V

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Product Specification

www.jmnic.com

Silicon NPN Power Transistors

DESCRIPTION

・

・With

TO-66 package

・High

breakdown voltage

・Excellent

safe operating area

APPLICATIONS

・Designed

for driver circuits,switching

and amplifier applications

PINNING

Base

Emitter

Collector

DESCRIPTION

2N5050 2N5051 2N5052

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=

℃)

SYMBOL

PARAMETER

2N5050

CBO

Collector-base voltage

2N5051

2N5052

2N5050

CEO

Collector-emitter voltage

2N5051

2N5052

EBO

stg

Emitter-base voltage

Collector current

Total Power Dissipation

Junction temperature

Storage temperature

=25℃

Open collector

Open base

Open emitter

CONDITIONS

VALUE

125

150

200

125

150

200

150

-65~200

℃

UNIT

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

7.0

UNIT

℃/W

JMnic

2N5050 Related Products

	2N5050	2N5051	2N5052	2N5050_15
Description	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66
Maximum collector current	2 A	2 A	2 A	2 A
Maximum Collector-Emitter Voltage	150 V	150 V	150 V	150 V
Number of terminals	2	2	2	2
state	Active	Active	Active	Active
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
structure	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	25	25	25	25
jedec_95_code	TO-66	TO-66	TO-66	TO-66
jesd_30_code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Maximum operating temperature	175 Cel	175 Cel	175 Cel	175 Cel
Packaging Materials	METAL	METAL	METAL	METAL
packaging shape	ROUND	ROUND	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
larity_channel_type	NPN	NPN	NPN	NPN
wer_dissipation_max__abs_	40 W	40 W	40 W	40 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors
surface mount	NO	NO	NO	NO
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Rated crossover frequency	10 MHz	10 MHz	10 MHz	10 MHz
vcesat_max	1 V	1 V	1 V	1 V

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