Standard SRAM, 128KX8, 30ns, CMOS, CDIP32
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| Reach Compliance Code | unknown |
| Maximum access time | 30 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T32 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Minimum standby current | 2 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |





| 71024L30DB | 71024L25D | 71024L25P | |
|---|---|---|---|
| Description | Standard SRAM, 128KX8, 30ns, CMOS, CDIP32 | Standard SRAM, 128KX8, 25ns, CMOS, CDIP32 | Standard SRAM, 128KX8, 25ns, CMOS, PDIP32 |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum access time | 30 ns | 25 ns | 25 ns |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T32 | R-XDIP-T32 | R-PDIP-T32 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 1048576 bit | 1048576 bit | 1048576 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 |
| Number of terminals | 32 | 32 | 32 |
| word count | 131072 words | 131072 words | 131072 words |
| character code | 128000 | 128000 | 128000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 70 °C |
| organize | 128KX8 | 128KX8 | 128KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | PLASTIC/EPOXY |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Minimum standby current | 2 V | 2 V | 2 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |