S10U150FCT
Extreme Low VF Trench MOS Schottky
REVERSE VOLTAGE
- 150 Volts
FORWARD CURRENT - 10.0 Amperes
TO-220F
FEATURES
‧
Low power loss, high efficiency
‧
Low forward voltage drop
‧
High forward surge capability
‧
High frequency operation
‧
Excellent high temperature stability
‧
Trench MOS Schottky technology
MECHANICAL DATA
‧
Case: TO-220F
‧
Polarity: As marked
‧
Weight: Approximated 1.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Forward Voltage Drop
I
F
=3A
(T
J
=25℃)
I
F
=3A
(T
J
=125℃)
I
F
=5 A (T
J
=25℃)
I
F
=5 A (T
J
=125℃)
Maximum Reverse Current at Rated V
RRM
T
J
=25°C
T
J
=125°C
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
Symbol
V
RRM
V
RMS
Typ.
0.79
0.62
0.89
0.67
Typ.
1
2
10
5
80
1.0
-65 to +150
Value
150
105
Max.
-
-
0.95
0.75
Max.
30
10
Unit
V
V
V
F
V
I
R
µA
mA
A
I
O
I
FSM
I
RRM
T
J,
T
STG
A
A
°C
S10U150FCT_V0
1