Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
BPW 34 FA
BPW 34 FAS
BPW 34 FAS (E9087)
Wesentliche Merkmale
• Speziell geeignet für den Wellenlängenbereich
von 830 nm bis 880 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 FAS/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow Löten
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerung
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type
BPW 34 FA
BPW 34 FAS
BPW 34 FAS (E9087)
Bestellnummer
Ordering Code
Q62702-P1129
Q62702-P463
Q62702-P1829
Features
• Especially suitable for the wavelength range of
830 nm to 880 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 FAS/(E9087): Suitable for
vapor-phase and IR-reflow soldering
Applications
• IR-remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
• Photointerrupters
2001-02-21
1
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Kennwerte
(
T
A
= 25
°C, λ
= 870 nm)
Characteristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
R
= 5 V,
E
e
= 1 mW/cm
2
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Quantenausbeute
Quantum yield
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
2001-02-21
Symbol
Symbol
Wert
Value
– 40 … + 100
12
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Symbol
Symbol
Wert
Value
50 (≥ 40)
Einheit
Unit
µA
I
p
λ
S max
λ
880
730 … 1100
nm
nm
A
L
×
B
L
×
W
ϕ
7.00
2.65
×
2.65
mm
2
mm
×
mm
±
60
2 (≤ 30)
0.65
0.93
320 (≥ 250)
Grad
deg.
nA
A/W
Electrons
Photon
mV
I
R
S
λ
η
V
O
2
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Kennwerte
(
T
A
= 25
°C, λ
= 870 nm)
Characteristics
(cont’d)
Bezeichnung
Parameter
Kurzschlußstrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
Nachweisgrenze,
V
R
= 10 V,
Detection limit
Symbol
Symbol
Wert
Value
23
20
Einheit
Unit
µA
ns
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
72
– 2.6
0.03
3.9
×
10
– 14
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
6.8
×
10
12
2001-02-21
3
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF01430
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
Ι
P
10
3
µ
A
OHF01428
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
70
60
50
40
30
V
O
10
1
10
2
80
60
Ι
P
10
0
10
1
40
20
20
10
0
400
600
800
1000 nm 1200
λ
10
-1
10
0
10
1
10
2
µ
W/cm
10
0
2
10
4
0
0
20
40
60
E
e
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
4000
OHF00080
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
100
C
pF
80
OHF00081
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
10
3
OHF00082
Ι
R
pA
Ι
R
nA
10
2
3000
70
60
2000
50
40
30
10
1
1000
10
0
20
10
0
0
5
10
15
V
V
R
20
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
4
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Maßzeichnung
Package Outlines
BPW 34 FA
5.4 (0.213)
Cathode marking
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
4.9 (0.193)
4.5 (0.177)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071)
1.4 (0.055)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.35 (0.014)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
5.08 (0.200)
spacing
GEOY6643
BPW 34 FAS
Chip position
1.2 (0.047)
1.1 (0.043)
0...0.1
(0...0.004)
0.3 (0.012)
1.1 (0.043)
0.9 (0.035)
˚
0.2 (0.008)
0.1 (0.004)
GEOY6863
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
0.7 (0.028)
1.8 (0.071)
±0.2 (0.008)
1.7 (0.067)
1.5 (0.059)
4.0 (0.157)
3.7 (0.146)
5
Photosensitive area
Cathode lead
2.65 (0.104) x 2.65 (0.104)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-02-21
0...5
3.5 (0.138)
3.0 (0.118)
Embedded System
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