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DMN62D0LFB-7B

Description
100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size454KB,5 Pages
ManufacturerETC2
Download Datasheet Parametric View All

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DMN62D0LFB-7B Overview

100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

DMN62D0LFB-7B Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionGREEN, PLASTIC, DFN1006-3, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
surface mountYes
Terminal formNO LEAD
terminal coatingNICKEL PALLADIUM GOLD
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.1000 A
Maximum drain on-resistance2 ohm
SMD Type
DMN62D0LFB-7B
N-CHANNEL ENHANCEMENT MODE MOSFET
Mos
Mosfets
Product Summary
V
(BR)DSS
R
DS(ON)
2Ω @ V
GS
= 4V
I
D
T
A
= 25°C
100mA
50mA
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
60V
2.5Ω @ V
GS
= 2.5V
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Gate
S
D
G
ESD PROTECTED
Gate
Protection
Diode
Source
Bottom View
Top View
Pin-Out
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